Part Details for SPA20N65C3XKSA1 by Infineon Technologies AG
Results Overview of SPA20N65C3XKSA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
SPA20N65C3XKSA1 Information
SPA20N65C3XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPA20N65C3XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPA20N65C3XKSA1-ND
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DigiKey | MOSFET N-CH 650V 20.7A TO220-3 Min Qty: 500 Lead time: 15 Weeks Container: Tube | Limited Supply - Call |
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$1.9360 | Buy Now |
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DISTI #
SPA20N65C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 20.7A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA20N65C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$1.7148 / $1.8345 | Buy Now |
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DISTI #
V79:2366_28364677
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Arrow Electronics | Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1916 | Americas - 9 |
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$3.0946 | Buy Now |
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DISTI #
86039418
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Verical | Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 150 Package Multiple: 1 Date Code: 1101 | Americas - 165 |
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$2.1125 / $2.5000 | Buy Now |
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DISTI #
70347309
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Verical | Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 1916 | Americas - 9 |
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$3.0946 | Buy Now |
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Bristol Electronics | 3994 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 20.7A I(D), 650V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 3195 |
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$3.3360 / $6.6720 | Buy Now |
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Rochester Electronics | SPA20N65 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 230 |
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$1.6900 / $2.1100 | Buy Now |
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DISTI #
SP000216362
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EBV Elektronik | Trans MOSFET NCH 650V 207A 3Pin TO220FP Tube (Alt: SP000216362) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SPA20N65C3XKSA1
SPA20N65C3XKSA1 CAD Models
SPA20N65C3XKSA1 Part Data Attributes
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SPA20N65C3XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA20N65C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220, FULLPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 690 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 20.7 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 62.1 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPA20N65C3XKSA1
This table gives cross-reference parts and alternative options found for SPA20N65C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA20N65C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPA60R190C6XKSA1 | Infineon Technologies AG | $1.9286 | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | SPA20N65C3XKSA1 vs IPA60R190C6XKSA1 |
| IPA60R165CPXKSA1 | Infineon Technologies AG | $3.1173 | Power Field-Effect Transistor, 21A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPA20N65C3XKSA1 vs IPA60R165CPXKSA1 |
| SPP15N60CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | SPA20N65C3XKSA1 vs SPP15N60CFD |
| TSM60NB190CIC0G | Taiwan Semiconductor | Check for Price | Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220, 3 PIN | SPA20N65C3XKSA1 vs TSM60NB190CIC0G |
| SPA20N65C3XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | SPA20N65C3XKSA1 vs SPA20N65C3XK |
| SIHA21N60EF-E3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SPA20N65C3XKSA1 vs SIHA21N60EF-E3 |
| STF25NM60ND | STMicroelectronics | Check for Price | N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package | SPA20N65C3XKSA1 vs STF25NM60ND |
| STI15NM60ND | STMicroelectronics | Check for Price | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in I2PAK package | SPA20N65C3XKSA1 vs STI15NM60ND |
| TK20A60W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | SPA20N65C3XKSA1 vs TK20A60W5 |
| SPA20N65C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 | SPA20N65C3XKSA1 vs SPA20N65C3 |
SPA20N65C3XKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the SPA20N65C3XSA1 is 175°C, as specified in the datasheet.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
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Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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The maximum allowable drain-source voltage (Vds) for the SPA20N65C3XKSA1 is 650V, as specified in the datasheet.