Part Details for SPA17N80C3 by Infineon Technologies AG
Results Overview of SPA17N80C3 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
SPA17N80C3 Information
SPA17N80C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPA17N80C3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPA17N80C3
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Mouser Electronics | MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3 RoHS: Compliant | 3586 |
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$1.8400 / $4.0600 | Buy Now |
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DISTI #
SPA17N80C3
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TME | Transistor: N-MOSFET, unipolar, 800V, 17A, 42W, PG-TO220-3-FP Min Qty: 1 | 0 |
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$2.4100 / $4.3100 | RFQ |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 10 |
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RFQ | |
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Cytech Systems Limited | 1000 |
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RFQ | ||
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Win Source Electronics | MOSFET N-CH 800V 17A TO220FP / Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220FP Tube | 18886 |
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$2.4648 / $3.6971 | Buy Now |
Part Details for SPA17N80C3
SPA17N80C3 CAD Models
SPA17N80C3 Part Data Attributes
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SPA17N80C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA17N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, FULL PACK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 670 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 51 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPA17N80C3
This table gives cross-reference parts and alternative options found for SPA17N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA17N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPP17N80C3 | Infineon Technologies AG | $1.9096 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SPA17N80C3 vs SPP17N80C3 |
| SPW17N80C3 | Infineon Technologies AG | $2.6319 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 | SPA17N80C3 vs SPW17N80C3 |
| SPP17N80C3XKSA1 | Infineon Technologies AG | $2.9394 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | SPA17N80C3 vs SPP17N80C3XKSA1 |
| SPW17N80C3FKSA1 | Infineon Technologies AG | $3.2475 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 | SPA17N80C3 vs SPW17N80C3FKSA1 |
| SPB17N80C3 | Infineon Technologies AG | $3.4494 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | SPA17N80C3 vs SPB17N80C3 |
| STB18NM80 | STMicroelectronics | $3.8006 | N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package | SPA17N80C3 vs STB18NM80 |
| SPB17N80C2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-220SMD, D2PAK-3 | SPA17N80C3 vs SPB17N80C2 |
| APT17N80SC3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | SPA17N80C3 vs APT17N80SC3 |
| APT17N80SC3G | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | SPA17N80C3 vs APT17N80SC3G |
| SPW17N80C2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | SPA17N80C3 vs SPW17N80C2 |
SPA17N80C3 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the SPA17N80C3 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To ensure reliability in high-temperature applications, it is recommended to follow the thermal design guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
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The recommended gate resistor value for the SPA17N80C3 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the SPA17N80C3 can be used in parallel to increase current handling capability, but it is recommended to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
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To protect the SPA17N80C3 from overvoltage and overcurrent conditions, it is recommended to use a voltage clamp or surge protector, and to implement overcurrent protection using a current sense resistor and a comparator or microcontroller.