Part Details for SPA16N50C3 by Infineon Technologies AG
Results Overview of SPA16N50C3 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SPA16N50C3 Information
SPA16N50C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SPA16N50C3
SPA16N50C3 CAD Models
SPA16N50C3 Part Data Attributes
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SPA16N50C3
Infineon Technologies AG
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Datasheet
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SPA16N50C3
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220FP, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 34 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPA16N50C3
This table gives cross-reference parts and alternative options found for SPA16N50C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA16N50C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.7578 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | SPA16N50C3 vs STP4NK60Z |
| STP14NK50Z | STMicroelectronics | $1.0033 | N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET | SPA16N50C3 vs STP14NK50Z |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | SPA16N50C3 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | SPA16N50C3 vs IPB80N06S2LH5ATMA1 |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | SPA16N50C3 vs IPD90N06S306ATMA1 |
| SSP10N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SPA16N50C3 vs SSP10N60B |
| PHB65N06LT | NXP Semiconductors | Check for Price | 63A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN | SPA16N50C3 vs PHB65N06LT |
| NDD506A | National Semiconductor Corporation | Check for Price | TRANSISTOR 19 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power | SPA16N50C3 vs NDD506A |
| BUK762R0-40C | Nexperia | Check for Price | Power Field-Effect Transistor | SPA16N50C3 vs BUK762R0-40C |
| STD17N06L-1 | STMicroelectronics | Check for Price | 17A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | SPA16N50C3 vs STD17N06L-1 |
SPA16N50C3 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the SPA16N50C3 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To ensure reliability in high-temperature applications, it is recommended to follow the thermal design guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature.
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The recommended gate resistor value for the SPA16N50C3 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the SPA16N50C3 can be used in parallel to increase current handling, but it is recommended to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
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To protect the SPA16N50C3 from overvoltage and overcurrent, it is recommended to use a voltage clamp or surge protector, and to implement overcurrent protection using a current sense resistor and a comparator or microcontroller.