Datasheets
SPA15N65C3 by: Infineon Technologies AG

Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Part Details for SPA15N65C3 by Infineon Technologies AG

Results Overview of SPA15N65C3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

SPA15N65C3 Information

SPA15N65C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SPA15N65C3

Part # Distributor Description Stock Price Buy
Win Source Electronics MOSFET N-CH 650V 15A TO220-3 8000
  • 12 $4.8267
  • 30 $3.9605
  • 46 $3.8369
  • 63 $3.7133
  • 81 $3.5897
  • 108 $3.2178
$3.2178 / $4.8267 Buy Now

Part Details for SPA15N65C3

SPA15N65C3 CAD Models

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SPA15N65C3 Part Data Attributes

SPA15N65C3 Infineon Technologies AG
Buy Now Datasheet
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SPA15N65C3 Infineon Technologies AG Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 460 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 34 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPA15N65C3

This table gives cross-reference parts and alternative options found for SPA15N65C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA15N65C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIHP15N65E-GE3 Vishay Intertechnologies $2.7257 Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 SPA15N65C3 vs SIHP15N65E-GE3
SIHB15N65E-GE3 Vishay Intertechnologies $2.8401 Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 SPA15N65C3 vs SIHB15N65E-GE3
SPP15N60C3XKSA1 Infineon Technologies AG $3.1246 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN SPA15N65C3 vs SPP15N60C3XKSA1
STB19NM65NT4 STMicroelectronics Check for Price 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 SPA15N65C3 vs STB19NM65NT4
SPI15N65C3 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN SPA15N65C3 vs SPI15N65C3
SPW15N60C3 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN SPA15N65C3 vs SPW15N60C3
STW19NM65N STMicroelectronics Check for Price 15.5A, 650V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 SPA15N65C3 vs STW19NM65N
SPA15N65C3XKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN SPA15N65C3 vs SPA15N65C3XKSA1

SPA15N65C3 Related Parts

SPA15N65C3 Frequently Asked Questions (FAQ)

  • The maximum operating junction temperature of the SPA15N65C3 is 175°C.

  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities at high temperatures.

  • The recommended gate resistor value for the SPA15N65C3 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, the SPA15N65C3 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and layout design to ensure reliable operation.

  • To protect the SPA15N65C3, it is recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, as well as consider using a suitable fuse or circuit breaker to prevent damage from excessive currents.

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