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Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SPA08N80C3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPA08N80C3
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Mouser Electronics | MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3 RoHS: Compliant | 165 |
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$1.0100 / $2.6000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 800V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 85 |
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$1.4963 / $2.4938 | Buy Now |
DISTI #
SPA08N80C3
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TME | Transistor: N-MOSFET, unipolar, 800V, 8A, 40W, PG-TO220-3-FP Min Qty: 1 | 67 |
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$1.3500 / $2.0100 | Buy Now |
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Cytech Systems Limited | 25000 |
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RFQ | ||
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Wuhan P&S | 800V,8A,N channel Power MOSFET Min Qty: 1 | 50 |
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$1.1200 / $1.5700 | Buy Now |
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SPA08N80C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA08N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | TO-220FP, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 340 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.65 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPA08N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA08N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
STP6NK60ZFP | STMicroelectronics | $0.7542 | N-channel 600 V, 1 Ohm typ., 6 A SuperMESH Power MOSFET in a TO-220 package | SPA08N80C3 vs STP6NK60ZFP |
STP3NK90ZFP | STMicroelectronics | $0.8525 | N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package | SPA08N80C3 vs STP3NK90ZFP |
STP7NK80ZFP | STMicroelectronics | $1.7097 | N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in a TO-220FP package | SPA08N80C3 vs STP7NK80ZFP |
SPA11N80C3 | Infineon Technologies AG | $1.7153 | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | SPA08N80C3 vs SPA11N80C3 |
STP5NK60ZFP | STMicroelectronics | Check for Price | N-channel 600 V, 1.2 Ohm typ., 5 A SuperMESH Power MOSFET in TO-220FP package | SPA08N80C3 vs STP5NK60ZFP |
STF5NK90Z | STMicroelectronics | Check for Price | 4.5A, 900V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN | SPA08N80C3 vs STF5NK90Z |
STP8NM50FP | STMicroelectronics | Check for Price | 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | SPA08N80C3 vs STP8NM50FP |
STP5NB90FP | STMicroelectronics | Check for Price | 5A, 900V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FP, 3 PIN | SPA08N80C3 vs STP5NB90FP |
STP3NB90FP | STMicroelectronics | Check for Price | 3.5A, 900V, 4.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | SPA08N80C3 vs STP3NB90FP |
STF20N20 | STMicroelectronics | Check for Price | 18A, 200V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | SPA08N80C3 vs STF20N20 |
The maximum operating temperature range for the SPA08N80C3 is -40°C to 150°C.
To ensure reliability, follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management. Additionally, consider using a gate driver with a high current capability and a low impedance path to the power device.
The recommended gate resistance for the SPA08N80C3 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
To minimize EMI, use a shielded cable for the gate drive, keep the power and gate drive loops as small as possible, and use a common mode choke or ferrite bead to filter the power supply.
The maximum allowable voltage transient for the SPA08N80C3 is 80% of the maximum rated voltage, which is 640V for this device.