Datasheets
SP000928950 by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for SP000928950 by Infineon Technologies AG

Results Overview of SP000928950 by Infineon Technologies AG

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SP000928950 Information

SP000928950 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SP000928950

Part # Distributor Description Stock Price Buy
DISTI # 726-SP000928950
Mouser Electronics MOSFETs N-Ch 55V 540mA SOT-23-3 RoHS: Compliant 16450
  • 1 $0.3900
  • 10 $0.2690
  • 100 $0.1700
  • 500 $0.1050
  • 1,000 $0.0760
  • 3,000 $0.0650
  • 6,000 $0.0570
  • 9,000 $0.0500
  • 24,000 $0.0410
$0.0410 / $0.3900 Buy Now
DISTI # SP000928950
EBV Elektronik Power MOSFET N Channel 55 V 540 mA 650 mOhm SOT23 3 Pins Surface Mount (Alt: SP000928950) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days EBV - 141000
Buy Now
DISTI # SP000928950
EBV Elektronik Power MOSFET N Channel 55 V 540 mA 650 mOhm SOT23 3 Pins Surface Mount (Alt: SP000928950) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SP000928950

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SP000928950 Part Data Attributes

SP000928950 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SP000928950 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 0.54 A
Drain-source On Resistance-Max 0.825 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

SP000928950 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal conductivity of 1 W/mK for the PCB material.

  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid hot spots. Monitor junction temperature and adjust the system design accordingly.

  • Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure a soldering iron temperature of 350°C (662°F) for hand soldering.

  • Use an ESD-protected workstation and follow proper handling procedures. Implement ESD protection circuits, such as TVS diodes or ESD arrays, in the system design.

  • Operating the device beyond the recommended conditions can lead to reduced reliability, decreased performance, and increased risk of failure. Ensure that the system design operates within the specified parameters to maintain optimal performance and reliability.

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