Part Details for SP000919330 by Infineon Technologies AG
Results Overview of SP000919330 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Aerospace and Defense
Telecommunications
Communication and Networking
SP000919330 Information
SP000919330 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SP000919330
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
726-SP000919330
|
Mouser Electronics | MOSFETs N-Ch 60V 230mA SOT-23-3 RoHS: Compliant | 23473 |
|
$0.0330 / $0.3300 | Buy Now |
|
DISTI #
SP000919330
|
EBV Elektronik | (Alt: SP000919330) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | EBV - 19344000 |
|
Buy Now |
Part Details for SP000919330
SP000919330 CAD Models
SP000919330 Part Data Attributes
|
|
SP000919330
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
SP000919330
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.23 A | |
| Drain-source On Resistance-Max | 3.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.8 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
SP000919330 Frequently Asked Questions (FAQ)
-
A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
-
Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the specified temperature range (TJ = -40°C to 150°C).
-
Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure the device is handled in accordance with the JEDEC J-STD-020 standard.
-
Implement EOS protection measures, such as TVS diodes or zener diodes, on the input and output pins. Ensure the device is operated within the specified voltage and current ratings.
-
Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins or electrical connections. Use anti-static packaging and follow ESD precautions.