Part Details for SMMA511DJ-T1-GE3 by Vishay Intertechnologies
Results Overview of SMMA511DJ-T1-GE3 by Vishay Intertechnologies
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
SMMA511DJ-T1-GE3 Information
SMMA511DJ-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Part Details for SMMA511DJ-T1-GE3
SMMA511DJ-T1-GE3 CAD Models
SMMA511DJ-T1-GE3 Part Data Attributes
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SMMA511DJ-T1-GE3
Vishay Intertechnologies
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Datasheet
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SMMA511DJ-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 6.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SMMA511DJ-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage temperature for SMMA511DJ-T1-GE3 is -40°C to 125°C, as per Vishay's storage and handling guidelines.
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Yes, the SMMA511DJ-T1-GE3 is a high-reliability device, suitable for use in demanding applications such as aerospace, defense, and industrial control systems.
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To prevent electrostatic discharge (ESD) damage, handle the SMMA511DJ-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper handling and storage procedures.
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The maximum power dissipation for SMMA511DJ-T1-GE3 is 1.5 W, as specified in the datasheet. Ensure that the device is operated within this limit to prevent overheating and damage.
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Yes, the SMMA511DJ-T1-GE3 is rated for operation up to 150°C, making it suitable for use in high-temperature environments. However, ensure that the device is properly derated for power dissipation and thermal management.