Part Details for SMBT2222AE6327 by Infineon Technologies AG
Results Overview of SMBT2222AE6327 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SMBT2222AE6327 Information
SMBT2222AE6327 by Infineon Technologies AG is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SMBT2222AE6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2992 |
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RFQ | ||
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Bristol Electronics | Min Qty: 45 | 2330 |
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$0.0338 / $0.1125 | Buy Now |
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Bristol Electronics | Min Qty: 45 | 2220 |
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$0.0338 / $0.1125 | Buy Now |
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DISTI #
SMBT2222AE6327
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TME | Transistor: NPN, bipolar, 40V, 0.6A, 0.33W, SOT23 Min Qty: 1 | 0 |
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$0.0380 / $0.2728 | RFQ |
Part Details for SMBT2222AE6327
SMBT2222AE6327 CAD Models
SMBT2222AE6327 Part Data Attributes
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SMBT2222AE6327
Infineon Technologies AG
Buy Now
Datasheet
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SMBT2222AE6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Base Capacitance-Max | 5 pF | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| Fall Time-Max (tf) | 60 ns | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.33 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 25 ns | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Turn-off Time-Max (toff) | 285 ns | |
| Turn-on Time-Max (ton) | 35 ns | |
| VCEsat-Max | 1 V |
Alternate Parts for SMBT2222AE6327
This table gives cross-reference parts and alternative options found for SMBT2222AE6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SMBT2222AE6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MMBT2222A | Taitron Components Inc | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 | SMBT2222AE6327 vs MMBT2222A |
| KST2222A | Samsung Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | SMBT2222AE6327 vs KST2222A |
| PMBT2222A/T4 | NXP Semiconductors | Check for Price | TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, BIP General Purpose Small Signal | SMBT2222AE6327 vs PMBT2222A/T4 |
| PMBT2222TRL | NXP Semiconductors | Check for Price | TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | SMBT2222AE6327 vs PMBT2222TRL |
| PMBT2222 | YAGEO Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | SMBT2222AE6327 vs PMBT2222 |
| CMPT2222ATIN/LEAD | Central Semiconductor Corp | Check for Price | Small Signal Bipolar Transistor, | SMBT2222AE6327 vs CMPT2222ATIN/LEAD |
| SMBT2222 | Siemens | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | SMBT2222AE6327 vs SMBT2222 |
| MMBT2222 | Diotec Semiconductor AG | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3 | SMBT2222AE6327 vs MMBT2222 |
| MMBT2222ALT1 | Luguang Electronic Technology Co Ltd | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | SMBT2222AE6327 vs MMBT2222ALT1 |
SMBT2222AE6327 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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The gate resistor value depends on the specific application, switching frequency, and gate driver characteristics. As a general guideline, Infineon recommends a gate resistor value between 1 ohm and 10 ohm. For more specific guidance, consult Infineon's application note AN2013-01 or contact their technical support.
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According to Infineon, the maximum allowed voltage overshoot during turn-on and turn-off is 10% of the maximum rated voltage (VCC) for a duration of less than 100 ns. Exceeding this limit may affect the device's reliability and lifespan.
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While the SMBT2222AE6327 is rated for operation up to 150°C, Infineon recommends derating the device's power dissipation and voltage ratings at higher temperatures. Consult Infineon's application note AN2013-02 for guidance on high-temperature operation and derating.
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Infineon provides guidelines for EMC design in their application note AN2013-04, which covers topics such as layout, component selection, and shielding. Additionally, consult the relevant industry standards (e.g., IEC 61000-4-2) and perform EMC testing to ensure compliance.