Datasheets
SMBJ30AE3/TR13 by:

Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

Part Details for SMBJ30AE3/TR13 by Microsemi Corporation

Results Overview of SMBJ30AE3/TR13 by Microsemi Corporation

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SMBJ30AE3/TR13 Information

SMBJ30AE3/TR13 by Microsemi Corporation is a Transient Suppressor.
Transient Suppressors are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for SMBJ30AE3/TR13

Part # Distributor Description Stock Price Buy
Vyrian Diodes 156
RFQ

Part Details for SMBJ30AE3/TR13

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SMBJ30AE3/TR13 Part Data Attributes

SMBJ30AE3/TR13 Microsemi Corporation
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SMBJ30AE3/TR13 Microsemi Corporation Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code DO-214AA
Package Description ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
Pin Count 2
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Microsemi Corporation
Breakdown Voltage-Max 36.8 V
Breakdown Voltage-Min 33.3 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-J2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 30 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form J BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10

Alternate Parts for SMBJ30AE3/TR13

This table gives cross-reference parts and alternative options found for SMBJ30AE3/TR13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SMBJ30AE3/TR13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SMBJ30 Silicon Standard Corp Check for Price Transient Suppressor, SMBJ30AE3/TR13 vs SMBJ30
SMBJ30A-E3/5B Vishay Semiconductors Check for Price DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN, Transient Suppressor SMBJ30AE3/TR13 vs SMBJ30A-E3/5B
SMBJ30A General Instrument Corp Check for Price Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, SMBJ30AE3/TR13 vs SMBJ30A
SMBJ30A Microsemi Corporation Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2 SMBJ30AE3/TR13 vs SMBJ30A
SMBJ30A-M3/5B Vishay Intertechnologies Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30A-M3/5B
SMBJ30A YAGEO Corporation Check for Price Trans Voltage Suppressor Diode, SMBJ30AE3/TR13 vs SMBJ30A
MXLSMBJ30A Microchip Technology Inc Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA SMBJ30AE3/TR13 vs MXLSMBJ30A
SMBJ30A Bourns Inc Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30A
MXSMBJ30A Microchip Technology Inc Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA SMBJ30AE3/TR13 vs MXSMBJ30A
Part Number Manufacturer Composite Price Description Compare
SMBJ30A MERITEK Electronics Corporation Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30A
MASMBJ30A Microchip Technology Inc $5.4078 Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA SMBJ30AE3/TR13 vs MASMBJ30A
SMBJ30A Uniohm Corp Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30A
SMBJ30 Pulse Electronics Corporation Check for Price Trans Voltage Suppressor Diode, 30V V(RWM), Unidirectional, SMBJ30AE3/TR13 vs SMBJ30
SMBJ30A-E3/52 Vishay Intertechnologies $0.1923 Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30A-E3/52
SMBJ30A Sangdest Microelectronics (Nanjing) Co Ltd Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30A
SMBJ30 HY Electronic Corp Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30
SMBJ30A-13-F Diodes Incorporated $0.1030 Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, SMB, 2 PIN SMBJ30AE3/TR13 vs SMBJ30A-13-F
MSMBJ30AE3/TR Microchip Technology Inc $1.3250 Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA SMBJ30AE3/TR13 vs MSMBJ30AE3/TR
SMBJ30A Littelfuse Inc Check for Price Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMBJ30AE3/TR13 vs SMBJ30A

SMBJ30AE3/TR13 Frequently Asked Questions (FAQ)

  • The recommended land pattern for the SMBJ30AE3/TR13 can be found in the Microsemi Corporation's application note AN-1071, which provides guidelines for surface mount assembly of Microsemi's SMB and SMC packages.

  • To ensure the reliability of the SMBJ30AE3/TR13 in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider the thermal resistance of the device, PCB, and surrounding environment. Additionally, it is recommended to perform thermal simulations and testing to validate the design.

  • The SMBJ30AE3/TR13 is designed to operate within a specific voltage range (30V) and deviating from this range may affect its performance and reliability. It is recommended to consult with Microsemi Corporation's application engineers or technical support to determine the feasibility of using the device in a non-standard voltage configuration.

  • The SMBJ30AE3/TR13 has an ESD rating of 30kV (Human Body Model) and 15kV (Machine Model), as specified in the datasheet. However, it is recommended to follow proper ESD handling and storage procedures to prevent damage to the device.

  • The SMBJ30AE3/TR13 is not specifically designed or tested for radiation hardness. If radiation hardness is a requirement, it is recommended to consult with Microsemi Corporation's radiation-hardened product portfolio or to contact their application engineers for guidance.

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