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Part Details for SISS71DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SISS71DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Environmental Monitoring
Industrial Automation
Agriculture Technology
Medical Imaging
SISS71DN-T1-GE3 Information
SISS71DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SISS71DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
99Y9655
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Newark | Mosfet, P-Ch, -100V, -23A, Powerpak1212, Transistor Polarity:P Channel, Continuous Drain Current Id:-23A, Drain Source Voltage Vds:-100V, On Resistance Rds(On):0.047Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Rohs Compliant: Yes |Vishay SISS71DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9300 |
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$0.8840 / $1.9000 | Buy Now |
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DISTI #
20AC3914
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Newark | N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SISS71DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4580 / $0.5340 | Buy Now |
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DISTI #
SISS71DN-T1-GE3
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Avnet Americas | P-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SISS71DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$0.3792 / $0.4000 | Buy Now |
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DISTI #
78-SISS71DN-T1-GE3
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Mouser Electronics | MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant | 20447 |
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$0.5000 / $1.2800 | Buy Now |
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DISTI #
E02:0323_10765119
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Arrow Electronics | Trans MOSFET P-CH 100V 23A 8-Pin PowerPAK 1212-S EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks | Europe - 6000 |
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$0.4404 / $0.4490 | Buy Now |
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DISTI #
V72:2272_17580897
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Arrow Electronics | Trans MOSFET P-CH 100V 23A 8-Pin PowerPAK 1212-S EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2504 Container: Cut Strips | Americas - 4606 |
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$0.4295 / $1.0497 | Buy Now |
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DISTI #
87703430
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Verical | Trans MOSFET P-CH 100V 23A 8-Pin PowerPAK 1212-S EP T/R Min Qty: 14 Package Multiple: 1 Date Code: 2504 | Americas - 4606 |
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$0.4295 / $0.8601 | Buy Now |
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DISTI #
SISS71DN-T1-GE3
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Avnet Asia | P-CHANNEL 100-V (D-S) MOSFET (Alt: SISS71DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
SISS71DN-T1-GE3
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EBV Elektronik | PCHANNEL 100V DS MOSFET (Alt: SISS71DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days | EBV - 3000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
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$1.0200 | Buy Now |
Part Details for SISS71DN-T1-GE3
SISS71DN-T1-GE3 CAD Models
SISS71DN-T1-GE3 Part Data Attributes
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SISS71DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISS71DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Date Of Intro | 2016-09-25 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.082 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -50 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SISS71DN-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for SISS71DN-T1-GE3 is a 6-pin SOT23 package with a minimum pad size of 1.3 mm x 1.3 mm and a thermal pad size of 2.5 mm x 2.5 mm.
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To ensure reliability in high-temperature applications, ensure the device operates within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management and PCB design guidelines.
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The maximum allowed voltage on the input pins of SISS71DN-T1-GE3 is 5.5V, exceeding which may cause permanent damage to the device.
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Yes, SISS71DN-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI).
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Handle SISS71DN-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, to prevent electrostatic discharge damage. Follow proper handling and storage procedures to minimize ESD risks.