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Part Details for SISS26LDN-T1-GE3 by Vishay Intertechnologies
Results Overview of SISS26LDN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
SISS26LDN-T1-GE3 Information
SISS26LDN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SISS26LDN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06AH4241
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Newark | Mosfet, N-Ch, 60V, 81.2A, 150Deg C, 57W, Transistor Polarity:N Channel, Continuous Drain Current Id:81.2A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0034Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Powerrohs Compliant: Yes |Vishay SISS26LDN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 15835 |
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$0.9550 / $1.7300 | Buy Now |
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DISTI #
SISS26LDN-T1-GE3
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Avnet Americas | Power MOSFET, N Channel, 60 V, 81.2 A, 0.0034 ohm, PowerPAK 1212, Surface Mount - Tape and Reel (Alt: SISS26LDN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4560 / $0.4688 | Buy Now |
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DISTI #
78-SISS26LDN-T1-GE3
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Mouser Electronics | MOSFETs Nch 60V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant | 179978 |
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$0.4950 / $1.4600 | Buy Now |
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DISTI #
SISS26LDN-T1-GE3
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TTI | MOSFETs Nch 60V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4570 / $0.4950 | Buy Now |
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DISTI #
SISS26LDN-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 65A, Idm: 150A, 36W Min Qty: 1 | 0 |
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$0.7100 / $1.0600 | RFQ |
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LCSC | 60V 81.2A 36W 0.00434.5V10A 2.5V 1 N-channel MOSFETs ROHS | 42 |
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$0.9143 / $0.9596 | Buy Now |
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Vyrian | Transistors | 49785 |
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RFQ |
Part Details for SISS26LDN-T1-GE3
SISS26LDN-T1-GE3 CAD Models
SISS26LDN-T1-GE3 Part Data Attributes
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SISS26LDN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISS26LDN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2019-01-09 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 81.2 A | |
| Drain-source On Resistance-Max | 0.0043 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 24 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 68 ns | |
| Turn-on Time-Max (ton) | 188 ns |
SISS26LDN-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for SISS26LDN-T1-GE3 is a rectangular pad with a size of 1.3 mm x 0.8 mm, with a 0.5 mm radius corner. The pad should be centered on the component and have a solder mask defined (SMD) pad.
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To ensure proper thermal management, it is recommended to provide a thermal pad on the PCB, and to use a thermal interface material (TIM) between the component and the heat sink. The thermal pad should be connected to a copper plane or a heat sink to dissipate heat efficiently.
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The maximum operating temperature range for SISS26LDN-T1-GE3 is -40°C to 150°C. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
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Yes, SISS26LDN-T1-GE3 is suitable for high-reliability applications. It is built with a robust design and undergoes rigorous testing to ensure its performance and reliability in demanding environments.
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To ensure the reliability of SISS26LDN-T1-GE3 in a humid environment, it is recommended to apply a conformal coating to the PCB and component. Additionally, the device should be stored in a dry environment, and the PCB should be designed with moisture-resistant materials.