Part Details for SISA26DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SISA26DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Healthcare
Electronic Manufacturing
Automotive
SISA26DN-T1-GE3 Information
SISA26DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SISA26DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2932955RL
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Farnell | MOSFET, N-CH, 25V, 60A, 150DEG C, 39W RoHS: Compliant Min Qty: 100 Lead time: 19 Weeks, 1 Days Container: Reel | 4095 |
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$0.3080 / $0.4526 | Buy Now |
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DISTI #
2932955
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Farnell | MOSFET, N-CH, 25V, 60A, 150DEG C, 39W RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Cut Tape | 4095 |
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$0.3080 / $0.8918 | Buy Now |
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DISTI #
SISA26DN-T1-GE3
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Avnet Americas | N-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SISA26DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.2544 / $0.2650 | Buy Now |
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DISTI #
78-SISA26DN-T1-GE3
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Mouser Electronics | MOSFETs 25V Vds 16V Vgs PowerPAK 1212-8 RoHS: Compliant | 6000 |
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$0.2650 / $0.6400 | Buy Now |
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DISTI #
V72:2272_21388883
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Arrow Electronics | Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2332 Container: Cut Strips | Americas - 4500 |
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$0.2846 / $0.4285 | Buy Now |
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DISTI #
76463430
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Verical | Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 21 Package Multiple: 1 Date Code: 2332 | Americas - 4500 |
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$0.2846 / $0.3819 | Buy Now |
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Bristol Electronics | 6000 |
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RFQ | ||
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Quest Components | 4800 |
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$0.3420 / $1.1400 | Buy Now | |
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Quest Components | 812 |
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$0.2470 / $0.9500 | Buy Now | |
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DISTI #
SISA26DN-T1-GE3
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TTI | MOSFETs 25V Vds 16V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.2590 / $0.2800 | Buy Now |
Part Details for SISA26DN-T1-GE3
SISA26DN-T1-GE3 CAD Models
SISA26DN-T1-GE3 Part Data Attributes
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SISA26DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISA26DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2017-03-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.00265 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 105 pF | |
| JESD-30 Code | S-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 39 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 48 ns | |
| Turn-on Time-Max (ton) | 64 ns |
SISA26DN-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SISA26DN-T1-GE3 is a standard SOD-323 package with a 1.7mm x 1.3mm pad size and a 0.5mm x 0.5mm thermal pad.
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To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pads. Avoid overheating or applying excessive force, which can damage the device.
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The maximum allowed voltage on the SISA26DN-T1-GE3's input pins is 5V, exceeding which can cause permanent damage to the device.
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The SISA26DN-T1-GE3 is rated for operation up to 150°C, but it's recommended to derate the power dissipation according to the temperature derating curve provided in the datasheet to ensure reliable operation.
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Handle the SISA26DN-T1-GE3 with ESD-protective equipment, such as wrist straps or mats, to prevent electrostatic discharge damage. Avoid touching the device's pins or exposing it to static electricity.