Part Details for SIS412DN-T1-GE3 by Vishay Siliconix
Results Overview of SIS412DN-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIS412DN-T1-GE3 Information
SIS412DN-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIS412DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIS412DN-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 12A PPAK1212-8 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
30357 In Stock |
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$0.1875 / $0.7100 | Buy Now |
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DISTI #
70459588
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RS | MOSFET N-CH 30V 12A 1212-8 PPAK Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.4820 / $0.5670 | RFQ |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 8.7A I(D), 30V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 327 |
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$0.2100 / $0.4500 | Buy Now |
Part Details for SIS412DN-T1-GE3
SIS412DN-T1-GE3 CAD Models
SIS412DN-T1-GE3 Part Data Attributes
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SIS412DN-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIS412DN-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | SMALL OUTLINE, S-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 15.6 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIS412DN-T1-GE3
This table gives cross-reference parts and alternative options found for SIS412DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIS412DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RF4E080BNTR | ROHM Semiconductor | $0.3212 | Power Field-Effect Transistor, 8A I(D), 30V, 0.0246ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN | SIS412DN-T1-GE3 vs RF4E080BNTR |
SIS412DN-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage temperature for SIS412DN-T1-GE3 is -40°C to 125°C.
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Yes, SIS412DN-T1-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
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The maximum operating voltage for SIS412DN-T1-GE3 is 100V.
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Yes, SIS412DN-T1-GE3 is designed for high-reliability applications, including automotive, industrial, and aerospace industries.
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The typical lead time for SIS412DN-T1-GE3 varies depending on the quantity and availability, but it's usually around 8-12 weeks.