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Transistors / Power Field-Effect Transistors / SIS412DN-T1-GE3
Datasheets
SIS412DN-T1-GE3 by:

Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Part Details for SIS412DN-T1-GE3 by Vishay Intertechnologies

Results Overview of SIS412DN-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

SIS412DN-T1-GE3 Information

SIS412DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIS412DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 55R1906
Newark Mosfet, N Channel, 40V, 12A, Powerpak8, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SIS412DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 4
  • 1 $0.3530
  • 10 $0.3530
  • 25 $0.3230
  • 50 $0.3230
  • 100 $0.2980
  • 500 $0.2980
$0.2980 / $0.3530 Buy Now
DISTI # 55R1906
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Bulk (Alt: 55R1906) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk 4 Partner Stock
  • 1 $0.8420
  • 10 $0.5890
  • 25 $0.5410
  • 50 $0.4920
  • 100 $0.4440
$0.4440 / $0.8420 Buy Now
DISTI # SIS412DN-T1-GE3
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1911
  • 6,000 $0.1882
  • 12,000 $0.1872
  • 18,000 $0.1862
  • 24,000 $0.1853
$0.1853 / $0.1911 Buy Now
DISTI # 781-SIS412DN-T1-GE3
Mouser Electronics MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 30968
  • 1 $0.6000
  • 10 $0.3810
  • 25 $0.3800
  • 100 $0.3020
  • 500 $0.2680
  • 1,000 $0.2420
  • 3,000 $0.2070
  • 6,000 $0.2000
$0.2000 / $0.6000 Buy Now
DISTI # V36:1790_07433130
Arrow Electronics Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Date Code: 2433 Americas - 3000
  • 3,000 $0.2004
  • 6,000 $0.1927
  • 9,000 $0.1908
  • 15,000 $0.1889
  • 21,000 $0.1831
$0.1831 / $0.2004 Buy Now
DISTI # V72:2272_07433130
Arrow Electronics Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2321 Container: Cut Strips Americas - 15
  • 1 $0.3425
  • 10 $0.2013
$0.2013 / $0.3425 Buy Now
Future Electronics SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Container: Cut Tape/Mini-Reel 600
Cut Tape/Mini-Reel
  • 1 $0.6650
  • 15 $0.5700
  • 75 $0.5200
  • 300 $0.4700
  • 1,500 $0.4150
$0.4150 / $0.6650 Buy Now
Future Electronics SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Container: Reel 0
Reel
  • 3,000 $0.2250
  • 9,000 $0.2200
  • 15,000 $0.2150
$0.2150 / $0.2250 Buy Now
DISTI # 84419306
Verical Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2433 Americas - 3000
  • 3,000 $0.2004
  • 6,000 $0.1927
  • 9,000 $0.1908
  • 15,000 $0.1889
  • 21,000 $0.1831
$0.1831 / $0.2004 Buy Now
Bristol Electronics   27000
RFQ
Bristol Electronics   15357
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 8.7A I(D), 30V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 12285
  • 1 $0.7500
  • 2,668 $0.2625
  • 5,715 $0.2250
$0.2250 / $0.7500 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 8.7A I(D), 30V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1932
  • 1 $0.6500
  • 186 $0.1950
  • 1,027 $0.1690
$0.1690 / $0.6500 Buy Now
DISTI # SIS412DN-T1-GE3
TTI MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 81000
In Stock
  • 3,000 $0.2050
  • 6,000 $0.1980
  • 9,000 $0.1940
  • 15,000 $0.1900
  • 21,000 $0.1870
$0.1870 / $0.2050 Buy Now
Future Electronics SiS412DN Series N-Channel 30 V 24 mOhms SMT Power Mosfet - PowerPAK-1212-8 Min Qty: 1 Package Multiple: 1 600
null
  • 1 $0.6400
  • 15 $0.5500
  • 75 $0.4950
  • 300 $0.4500
  • 1,500 $0.3950
$0.3950 / $0.6400 Buy Now
DISTI # SIS412DN-T1-GE3
TME Transistor: N-MOSFET, unipolar, 30V, 12A, Idm: 30A, 10W Min Qty: 3 2981
  • 3 $0.5130
  • 25 $0.4620
  • 100 $0.4100
  • 500 $0.3690
  • 3,000 $0.3490
$0.3490 / $0.5130 Buy Now
DISTI # SMC-SIS412DN-T1-GE3
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 1750
RFQ
DISTI # SIS412DN-T1-GE3
Avnet Asia N-CHANNEL 30-V (D-S) MOSFET (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days 0
RFQ
DISTI # SIS412DN-T1-GE3
EBV Elektronik NCHANNEL 30V DS MOSFET (Alt: SIS412DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 3000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.5083
$0.5083 Buy Now
Vyrian Transistors 20995
RFQ

Part Details for SIS412DN-T1-GE3

SIS412DN-T1-GE3 CAD Models

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SIS412DN-T1-GE3 Part Data Attributes

Parametric Data
SIS412DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIS412DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 5 Days
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 1.25 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 15.6 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIS412DN-T1-GE3

This table gives cross-reference parts and alternative options found for SIS412DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIS412DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PMPB16XN,115 NXP Semiconductors Check for Price PMPB16XN - 30 V, single N-channel Trench MOSFET DFN 6-Pin SIS412DN-T1-GE3 vs PMPB16XN,115

SIS412DN-T1-GE3 Related Parts

SIS412DN-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended storage temperature for SIS412DN-T1-GE3 is -40°C to 125°C.

  • Yes, SIS412DN-T1-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.

  • The maximum operating voltage for SIS412DN-T1-GE3 is 100V.

  • Yes, SIS412DN-T1-GE3 is designed for high-reliability applications, including automotive, industrial, and aerospace industries.

  • The typical lead time for SIS412DN-T1-GE3 varies depending on the quantity and availability, but it's usually around 8-12 weeks.

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