Part Details for SIS330DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SIS330DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Consumer Electronics
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
SIS330DN-T1-GE3 Information
SIS330DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIS330DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2447 |
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RFQ | ||
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Quest Components | 1957 |
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$0.5264 / $1.5040 | Buy Now |
Part Details for SIS330DN-T1-GE3
SIS330DN-T1-GE3 CAD Models
SIS330DN-T1-GE3 Part Data Attributes
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SIS330DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIS330DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 35A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.0056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 52 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIS330DN-T1-GE3 Frequently Asked Questions (FAQ)
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A recommended PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers connected to the thermal pad, with multiple vias to dissipate heat efficiently. Additionally, keeping the PCB layers as thin as possible and using a thermal interface material can further improve heat dissipation.
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To ensure reliable soldering, it's essential to follow the recommended soldering profile, which can be found in the datasheet. Additionally, using a solder with a high melting point, such as SAC305, and ensuring the PCB is clean and free of oxidation can help prevent soldering issues.
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Although the datasheet specifies the recommended operating conditions, it's essential to note that the maximum allowed voltage on the input pins is typically 10% to 20% higher than the recommended voltage. However, it's always best to consult with Vishay's application engineers or the datasheet for specific guidance.
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To handle ESD protection, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, incorporating ESD protection devices, such as TVS diodes, in the circuit design can help protect the SIS330DN-T1-GE3 from ESD events.
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The recommended storage condition for the SIS330DN-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%. It's also essential to store the devices in their original packaging or anti-static bags to prevent damage.