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Part Details for SIS110DN-T1-GE3 by Vishay Intertechnologies
Results Overview of SIS110DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIS110DN-T1-GE3 Information
SIS110DN-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIS110DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78AC6534
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Newark | Mosfet, N-Ch, 100V, 14.2A, 150Deg C, 24W, Transistor Polarity:N Channel, Continuous Drain Current Id:14.2A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.045Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Vishay SIS110DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 27193 |
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$0.4490 / $0.7680 | Buy Now |
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DISTI #
59AC7459
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Newark | N-Channel 100-V (D-S) Mosfet |Vishay SIS110DN-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2400 / $0.3070 | Buy Now |
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DISTI #
SIS110DN-T1-GE3
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Avnet Americas | N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIS110DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
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$0.1986 / $0.2110 | Buy Now |
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DISTI #
78-SIS110DN-T1-GE3
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Mouser Electronics | MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 112708 |
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$0.2190 / $0.8000 | Buy Now |
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DISTI #
E02:0323_12762530
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Arrow Electronics | Trans MOSFET N-CH 100V 14.2A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks | Europe - 9000 |
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$0.2435 / $0.2526 | Buy Now |
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DISTI #
87047155
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Verical | Trans MOSFET N-CH 100V 14.2A 8-Pin PowerPAK 1212 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | Americas - 9000 |
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$0.2019 | Buy Now |
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DISTI #
SIS110DN-T1-GE3
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TTI | MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 3000 In Stock |
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$0.2020 / $0.2110 | Buy Now |
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Future Electronics | Single N-Channel 100 V 54 mOhm SMT TrenchFET� Power Mosfet - PowerPAK 1212-8 Min Qty: 3000 Package Multiple: 3000 |
12000 null |
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$0.1970 / $0.2050 | Buy Now |
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DISTI #
SIS110DN-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 11.4A, Idm: 20A Min Qty: 1 | 0 |
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$0.3450 / $0.7360 | RFQ |
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DISTI #
SIS110DN-T1-GE3
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IBS Electronics | SINGLE N-CHANNEL 100 V 54 MOHM SMT TRENCHFET®, POWER MOSFET - POWERPAK 1212-8 Min Qty: 6000 Package Multiple: 1 | 0 |
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$0.3185 / $0.3315 | Buy Now |
Part Details for SIS110DN-T1-GE3
SIS110DN-T1-GE3 CAD Models
SIS110DN-T1-GE3 Part Data Attributes
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SIS110DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIS110DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14.2 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 24 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Surface Mount | YES | |
| Terminal Finish | Pure Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 40 ns | |
| Turn-on Time-Max (ton) | 30 ns |
SIS110DN-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for the SIS110DN-T1-GE3 is in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%.
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To prevent ESD damage, handle the SIS110DN-T1-GE3 with an anti-static wrist strap, mat, or work surface. Ensure the workspace is ESD-protected and follow proper grounding procedures.
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The maximum allowable voltage for the SIS110DN-T1-GE3 is 120% of the rated voltage, but not exceeding 150V. Exceeding this voltage may cause permanent damage to the device.
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While the SIS110DN-T1-GE3 is rated for operation up to 125°C, it's essential to consider the derating curve and thermal management to ensure reliable operation in high-temperature environments.
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To ensure proper soldering, follow the recommended soldering profile, use a solder with a melting point below 220°C, and avoid applying excessive heat or mechanical stress to the device.