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Part Details for SIRB40DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIRB40DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIRB40DP-T1-GE3 Information
SIRB40DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIRB40DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
57AJ0395
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Newark | Dual Mosfet, n-Ch, 40V, 40A, Powerpak So Rohs Compliant: Yes |Vishay SIRB40DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 14977 |
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$1.0700 / $2.2300 | Buy Now |
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DISTI #
20AC3879
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Newark | Dual N-Channel 40-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SIRB40DP-T1-GE3 RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5790 / $0.5910 | Buy Now |
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DISTI #
SIRB40DP-T1-GE3
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Avnet Americas | DUAL N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIRB40DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$0.4765 / $0.5062 | Buy Now |
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DISTI #
78-SIRB40DP-T1-GE3
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Mouser Electronics | MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 26693 |
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$0.5060 / $1.4600 | Buy Now |
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DISTI #
SIRB40DP-T1-GE3
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TTI | MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4940 / $0.5450 | Buy Now |
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DISTI #
SIRB40DP-T1-GE3
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TME | Transistor: N-MOSFET x2, TrenchFET®, unipolar, 40V, 40A, Idm: 100A Min Qty: 1 | 0 |
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$0.7500 / $1.1300 | RFQ |
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DISTI #
SIRB40DP-T1-GE3
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IBS Electronics | DUAL N-CHANNEL 40 V 3.25 MOHM 46.2 W TRENCHFET GEN IV MOSFET-POWERPAK SO-8 DUAL Min Qty: 6000 Package Multiple: 1 | 0 |
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$0.9815 | Buy Now |
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DISTI #
SIRB40DP-T1-GE3
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EBV Elektronik | DUAL NCHANNEL 40V DS MOSFET (Alt: SIRB40DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 12796 |
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RFQ |
Part Details for SIRB40DP-T1-GE3
SIRB40DP-T1-GE3 CAD Models
SIRB40DP-T1-GE3 Part Data Attributes
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SIRB40DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIRB40DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Date Of Intro | 2016-09-25 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.00325 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 102 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 46.2 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 84 ns | |
| Turn-on Time-Max (ton) | 248 ns |
SIRB40DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SIRB40DP-T1-GE3 is a pad size of 4.5mm x 2.5mm with a 0.5mm thermal pad.
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To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the pads. Avoid overheating the component.
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The maximum operating temperature range for the SIRB40DP-T1-GE3 is -55°C to 175°C.
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Yes, the SIRB40DP-T1-GE3 is suitable for use in high-humidity environments, but it's recommended to apply a conformal coating to protect the component from moisture.
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Handle the SIRB40DP-T1-GE3 in an ESD-protected environment, wear an ESD wrist strap, and use ESD-safe packaging and tools to prevent ESD damage.