Part Details for SIRA06DP-T1-GE3 by Vishay Siliconix
Results Overview of SIRA06DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
SIRA06DP-T1-GE3 Information
SIRA06DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIRA06DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIRA06DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 40A PPAK SO-8 Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
577 In Stock |
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$0.4250 / $0.9800 | Buy Now |
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DISTI #
70243885
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RS | Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 40A, 2.5mohm @ 10V, PowerPAK SO-8 Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$1.2500 | RFQ |
Part Details for SIRA06DP-T1-GE3
SIRA06DP-T1-GE3 CAD Models
SIRA06DP-T1-GE3 Part Data Attributes
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SIRA06DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIRA06DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO T/R
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 79 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 62.5 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 76 ns | |
| Turn-on Time-Max (ton) | 44 ns |
SIRA06DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage temperature range for SIRA06DP-T1-GE3 is -40°C to 125°C.
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Yes, SIRA06DP-T1-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
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The maximum power dissipation for SIRA06DP-T1-GE3 is 1.5 W at an ambient temperature of 25°C.
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Yes, SIRA06DP-T1-GE3 is suitable for high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality construction and rigorous testing.
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Yes, SIRA06DP-T1-GE3 is compatible with lead-free soldering processes, making it suitable for use in modern electronic assemblies.