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Part Details for SIRA06DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIRA06DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
SIRA06DP-T1-GE3 Information
SIRA06DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIRA06DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68W7081
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Newark | Mosfet, N Channel, 30V, 40A, Powerpak So-8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.1V Rohs Compliant: Yes |Vishay SIRA06DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 249 |
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$0.1540 | Buy Now |
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DISTI #
68W7082
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Newark | Mosfet, N Ch, 30V, 40A, Powerpak So-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:62.5W Rohs Compliant: Yes |Vishay SIRA06DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4530 / $0.5340 | Buy Now |
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DISTI #
68W7081
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Avnet Americas | N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 68W7081) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 3 Days Container: Ammo Pack | 249 Partner Stock |
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$0.6700 | Buy Now |
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DISTI #
SIRA06DP-T1-GE3
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Avnet Americas | N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA06DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4000 / $0.4250 | Buy Now |
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DISTI #
78-SIRA06DP-T1-GE3
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Mouser Electronics | MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 1564 |
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$0.4250 / $0.9600 | Buy Now |
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Bristol Electronics | 975 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 40A I(D), 30V, 0.0025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 780 |
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$0.6080 / $1.5200 | Buy Now |
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DISTI #
SIRA06DP-T1-GE3
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TTI | MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.3880 / $0.4040 | Buy Now |
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DISTI #
SIRA06DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 40A, Idm: 80A, 40W Min Qty: 1 | 0 |
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$0.4330 / $1.0130 | RFQ |
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DISTI #
SIRA06DP-T1-GE3
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IBS Electronics | MOSFET N-CH 30V PPAK-SO8 TRANSISTOR POLARITY: N CHANNEL CONTINUOUS DRAIN CUR Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.3510 / $0.3640 | Buy Now |
Part Details for SIRA06DP-T1-GE3
SIRA06DP-T1-GE3 CAD Models
SIRA06DP-T1-GE3 Part Data Attributes
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SIRA06DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIRA06DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 79 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 62.5 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 76 ns | |
| Turn-on Time-Max (ton) | 44 ns |
SIRA06DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage temperature range for SIRA06DP-T1-GE3 is -40°C to 125°C.
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Yes, SIRA06DP-T1-GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
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The maximum power dissipation for SIRA06DP-T1-GE3 is 1.5 W at an ambient temperature of 25°C.
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Yes, SIRA06DP-T1-GE3 is suitable for high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality construction and rigorous testing.
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Yes, SIRA06DP-T1-GE3 is compatible with lead-free soldering processes, making it suitable for use in modern electronic assemblies.