Part Details for SIR870DP-T1-GE3 by Vishay Siliconix
Results Overview of SIR870DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
SIR870DP-T1-GE3 Information
SIR870DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIR870DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR870DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 100V 60A PPAK SO-8 Min Qty: 1 Lead time: 28 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4872 In Stock |
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$1.0125 / $2.5000 | Buy Now |
Part Details for SIR870DP-T1-GE3
SIR870DP-T1-GE3 CAD Models
SIR870DP-T1-GE3 Part Data Attributes
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SIR870DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIR870DP-T1-GE3
Vishay Siliconix
TRANSISTOR 60 A, 100 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIR870DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR870DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR870DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIR870ADP-T1-GE3 | Vishay Intertechnologies | $1.4114 | Power Field-Effect Transistor, 60A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SIR870DP-T1-GE3 vs SIR870ADP-T1-GE3 |
| SIR870ADP-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | SIR870DP-T1-GE3 vs SIR870ADP-T1-GE3 |
SIR870DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SIR870DP-T1-GE3 is a rectangle with dimensions of 6.1mm x 3.3mm, with a thermal pad in the center. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
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To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C. Apply a small amount of solder paste to the PCB pads, and then place the SIR870DP-T1-GE3 on the PCB. Use a reflow oven or a hot air gun to solder the component. Make sure to follow the recommended soldering profile to prevent damage to the component.
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The maximum operating temperature range for the SIR870DP-T1-GE3 is -55°C to 150°C. However, it's recommended to operate the component within a temperature range of -40°C to 125°C for optimal performance and reliability.
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The SIR870DP-T1-GE3 is not hermetically sealed, so it's not recommended for use in high-humidity environments. However, if you must use it in a humid environment, ensure the component is properly sealed or coated to prevent moisture ingress. Additionally, follow the recommended storage and handling procedures to prevent moisture absorption.
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Store the SIR870DP-T1-GE3 in a dry, cool place, away from direct sunlight and moisture. Handle the component by the body, avoiding touching the leads or electrical contacts. Use anti-static wrist straps or mats to prevent electrostatic discharge damage.