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Transistors / Power Field-Effect Transistors / SIR804DP-T1-GE3
Datasheets
SIR804DP-T1-GE3 by:

Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SIR804DP-T1-GE3 by Vishay Intertechnologies

Results Overview of SIR804DP-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SIR804DP-T1-GE3 Information

SIR804DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIR804DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 94T2657
Newark Mosfet, N Ch, 100V, 60A, Powerpak So-8, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Vishay SIR804DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $1.7200
$1.7200 Buy Now
DISTI # 86R3807
Newark Mosfet, N Ch, 100V, 60A, Powerpak So-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:104W Rohs Compliant: Yes |Vishay SIR804DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.5000
  • 4,000 $1.3600
  • 6,000 $1.3200
  • 10,000 $1.2700
$1.2700 / $1.5000 Buy Now
DISTI # SIR804DP-T1-GE3
Avnet Americas N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR804DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.1720
  • 6,000 $1.1500
  • 12,000 $1.1358
  • 18,000 $1.1152
  • 24,000 $1.0823
$1.0823 / $1.1720 Buy Now
DISTI # 781-SIR804DP-T1-GE3
Mouser Electronics MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 16056
  • 1 $2.9000
  • 10 $2.2500
  • 25 $2.2400
  • 100 $1.6200
  • 250 $1.5400
  • 500 $1.3200
  • 1,000 $1.2300
  • 3,000 $1.1500
$1.1500 / $2.9000 Buy Now
DISTI # V72:2272_09216014
Arrow Electronics Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2420 Container: Cut Strips Americas - 353
  • 1 $1.8500
  • 10 $1.6390
  • 25 $1.6300
  • 100 $1.3420
  • 250 $1.1800
$1.1800 / $1.8500 Buy Now
DISTI # 81054577
Verical Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R Min Qty: 5 Package Multiple: 1 Date Code: 2420 Americas - 353
  • 5 $1.8500
  • 10 $1.6390
  • 25 $1.6300
  • 100 $1.3420
  • 250 $1.1800
$1.1800 / $1.8500 Buy Now
Bristol Electronics   1146
RFQ
DISTI # SIR804DP-T1-GE3
TTI MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $1.1400
  • 6,000 $1.1200
  • 12,000 $1.0900
  • 18,000 $1.0700
$1.0700 / $1.1400 Buy Now
DISTI # SIR804DP-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 60A, Idm: 100A Min Qty: 3000 0
  • 3,000 $1.4000
$1.4000 RFQ
DISTI # SIR804DP-T1-GE3
IBS Electronics MOSFET N CH W DIODE 100V 60A PPAK8 TRANSISTOR POLARITY: N CHANNEL CONTINUOUS DR Min Qty: 3000 Package Multiple: 1 0
  • 3,000 $1.5990
$1.5990 Buy Now
DISTI # SIR804DP-T1-GE3
Avnet Asia N-CHANNEL 100-V (D-S) MOSFET (Alt: SIR804DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days 0
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 15
RFQ
DISTI # SIR804DP-T1-GE3
EBV Elektronik NCHANNEL 100V DS MOSFET (Alt: SIR804DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 5118
RFQ

Part Details for SIR804DP-T1-GE3

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SIR804DP-T1-GE3 Part Data Attributes

Parametric Data
SIR804DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR804DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 28 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 61 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIR804DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR804DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR804DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC059N04LSGATMA1 Infineon Technologies AG $0.5753 Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 SIR804DP-T1-GE3 vs BSC059N04LSGATMA1
SIR426DP-T1-GE3 Vishay Intertechnologies $0.5889 Power Field-Effect Transistor, 30A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 SIR804DP-T1-GE3 vs SIR426DP-T1-GE3
SIR880DP-T1-GE3 Vishay Intertechnologies $1.1792 Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 SIR804DP-T1-GE3 vs SIR880DP-T1-GE3
BSC520N15NS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 SIR804DP-T1-GE3 vs BSC520N15NS3G
BSC059N04LSG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 SIR804DP-T1-GE3 vs BSC059N04LSG
SIR862DP-T1-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 50A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 SIR804DP-T1-GE3 vs SIR862DP-T1-GE3
SIR166DP-T1-GE3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 SIR804DP-T1-GE3 vs SIR166DP-T1-GE3
BSC093N04LSG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 SIR804DP-T1-GE3 vs BSC093N04LSG
BSC027N04LSG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 SIR804DP-T1-GE3 vs BSC027N04LSG

SIR804DP-T1-GE3 Related Parts

SIR804DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended land pattern for the SIR804DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).

  • To ensure proper cooling, follow the thermal management guidelines in the datasheet, and consider using a heat sink with a thermal interface material (TIM) to reduce thermal resistance. Additionally, ensure good airflow around the device.

  • The maximum allowed voltage for the SIR804DP-T1-GE3's gate-source voltage (Vgs) is ±20 V. Exceeding this voltage may damage the device.

  • Yes, the SIR804DP-T1-GE3 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.

  • Follow proper ESD handling procedures when handling the SIR804DP-T1-GE3, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protective package.

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