Datasheets
SIR690DP-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SIR690DP-T1-GE3 by Vishay Intertechnologies

Results Overview of SIR690DP-T1-GE3 by Vishay Intertechnologies

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SIR690DP-T1-GE3 Information

SIR690DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

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DP83630SQX/NOPB Texas Instruments IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85
DP83620SQE/NOPB Texas Instruments Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85
DS100BR111ASQE/NOPB Texas Instruments DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85

Price & Stock for SIR690DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 15AC8646
Newark Mosfet, N-Ch, 200V, 34.4A, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:34.4A, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.0285Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Vishay SIR690DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 5436
  • 1 $2.3000
  • 25 $2.0300
  • 100 $1.6600
  • 500 $1.4900
  • 1,000 $1.1700
  • 2,500 $1.1300
  • 5,000 $1.0900
  • 10,000 $1.0700
$1.0700 / $2.3000 Buy Now
DISTI # 20AC3897
Newark N-Channel 200-V (D-S) Mosfet |Vishay SIR690DP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.7660
  • 10,000 $0.7400
$0.7400 / $0.7660 Buy Now
DISTI # SIR690DP-T1-GE3
Avnet Americas N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIR690DP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.6700
  • 12,000 $0.6593
  • 18,000 $0.6489
  • 30,000 $0.6381
  • 60,000 $0.6306
$0.6306 / $0.6700 Buy Now
DISTI # 78-SIR690DP-T1-GE3
Mouser Electronics MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 4114
  • 1 $1.8300
  • 10 $1.3000
  • 100 $0.9700
  • 250 $0.9690
  • 500 $0.8220
  • 1,000 $0.7580
  • 3,000 $0.6850
  • 6,000 $0.6700
$0.6700 / $1.8300 Buy Now
DISTI # V72:2272_17597420
Arrow Electronics Trans MOSFET N-CH 200V 34.4A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2342 Container: Cut Strips Americas - 2246
  • 1 $0.7973
  • 10 $0.7506
  • 25 $0.7485
  • 100 $0.7412
  • 250 $0.7340
  • 500 $0.7267
  • 1,000 $0.7194
$0.7194 / $0.7973 Buy Now
DISTI # 73513523
Verical Trans MOSFET N-CH 200V 34.4A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 9 Package Multiple: 1 Date Code: 2342 Americas - 2246
  • 9 $0.7506
  • 25 $0.7485
  • 100 $0.7412
  • 250 $0.7340
  • 500 $0.7267
  • 1,000 $0.7194
$0.7194 / $0.7506 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR 412
  • 1 $2.2000
  • 183 $0.7700
  • 391 $0.7150
$0.7150 / $2.2000 Buy Now
DISTI # SIR690DP-T1-GE3
TTI MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 6000
In Stock
  • 3,000 $0.6780
  • 6,000 $0.6630
$0.6630 / $0.6780 Buy Now
DISTI # SIR690DP-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 34.4A, Idm: 80A Min Qty: 3000 0
  • 3,000 $1.0000
$1.0000 RFQ
DISTI # SIR690DP-T1-GE3
IBS Electronics TRANSISTOR MOSFET N-CH 200V 34.4A 8-PIN POWERPAK SO T/R Min Qty: 3000 Package Multiple: 1 24000
  • 3,000 $0.8190
$0.8190 Buy Now
DISTI # SIR690DP-T1-GE3
Avnet Asia N-CHANNEL 200-V (D-S) MOSFET (Alt: SIR690DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days 0
RFQ
DISTI # SIR690DP-T1-GE3
EBV Elektronik NCHANNEL 200V DS MOSFET (Alt: SIR690DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days EBV - 3000
Buy Now

Part Details for SIR690DP-T1-GE3

SIR690DP-T1-GE3 CAD Models

SIR690DP-T1-GE3 Part Data Attributes

SIR690DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR690DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 28 Weeks
Date Of Intro 2016-09-25
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 34.4 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10.5 pF
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 58 ns

SIR690DP-T1-GE3 Related Parts

SIR690DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SIR690DP-T1-GE3 is a pad size of 5.5 mm x 4.5 mm with a 1.5 mm x 1.5 mm thermal pad. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.

  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C. Apply a small amount of solder paste to the PCB pads, and then place the SIR690DP-T1-GE3 on the PCB. Use a reflow oven or a hot air gun to solder the component. Make sure to follow the recommended soldering profile to prevent damage to the component.

  • The maximum operating temperature range for the SIR690DP-T1-GE3 is -55°C to 175°C. However, it's essential to note that the component's performance and reliability may degrade if operated at the extreme ends of this temperature range.

  • The SIR690DP-T1-GE3 is not hermetically sealed, so it's not recommended for use in high-humidity environments. However, if you must use it in such an environment, ensure that the component is properly sealed or coated to prevent moisture ingress.

  • The recommended storage condition for the SIR690DP-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C and humidity below 60%. Avoid storing the component in direct sunlight or near heat sources.

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