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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIR690DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
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DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
15AC8646
|
Newark | Mosfet, N-Ch, 200V, 34.4A, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:34.4A, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.0285Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Vishay SIR690DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5436 |
|
$1.0700 / $2.3000 | Buy Now |
DISTI #
20AC3897
|
Newark | N-Channel 200-V (D-S) Mosfet |Vishay SIR690DP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.7400 / $0.7660 | Buy Now |
DISTI #
SIR690DP-T1-GE3
|
Avnet Americas | N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIR690DP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
|
$0.6306 / $0.6700 | Buy Now |
DISTI #
78-SIR690DP-T1-GE3
|
Mouser Electronics | MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 4114 |
|
$0.6700 / $1.8300 | Buy Now |
DISTI #
V72:2272_17597420
|
Arrow Electronics | Trans MOSFET N-CH 200V 34.4A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2342 Container: Cut Strips | Americas - 2246 |
|
$0.7194 / $0.7973 | Buy Now |
DISTI #
73513523
|
Verical | Trans MOSFET N-CH 200V 34.4A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 9 Package Multiple: 1 Date Code: 2342 | Americas - 2246 |
|
$0.7194 / $0.7506 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR | 412 |
|
$0.7150 / $2.2000 | Buy Now |
DISTI #
SIR690DP-T1-GE3
|
TTI | MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.6630 / $0.6780 | Buy Now |
DISTI #
SIR690DP-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 34.4A, Idm: 80A Min Qty: 3000 | 0 |
|
$1.0000 | RFQ |
DISTI #
SIR690DP-T1-GE3
|
IBS Electronics | TRANSISTOR MOSFET N-CH 200V 34.4A 8-PIN POWERPAK SO T/R Min Qty: 3000 Package Multiple: 1 | 24000 |
|
$0.8190 | Buy Now |
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SIR690DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR690DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SOP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 28 Weeks | |
Date Of Intro | 2016-09-25 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 34.4 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10.5 pF | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 50 ns | |
Turn-on Time-Max (ton) | 58 ns |
The recommended PCB footprint for the SIR690DP-T1-GE3 is a pad size of 5.5 mm x 4.5 mm with a 1.5 mm x 1.5 mm thermal pad. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C. Apply a small amount of solder paste to the PCB pads, and then place the SIR690DP-T1-GE3 on the PCB. Use a reflow oven or a hot air gun to solder the component. Make sure to follow the recommended soldering profile to prevent damage to the component.
The maximum operating temperature range for the SIR690DP-T1-GE3 is -55°C to 175°C. However, it's essential to note that the component's performance and reliability may degrade if operated at the extreme ends of this temperature range.
The SIR690DP-T1-GE3 is not hermetically sealed, so it's not recommended for use in high-humidity environments. However, if you must use it in such an environment, ensure that the component is properly sealed or coated to prevent moisture ingress.
The recommended storage condition for the SIR690DP-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C and humidity below 60%. Avoid storing the component in direct sunlight or near heat sources.