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Part Details for SIR640ADP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIR640ADP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIR640ADP-T1-GE3 Information
SIR640ADP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIR640ADP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99W9556
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Newark | N-Channel 40-V (D-S) Mosfet |Vishay SIR640ADP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8560 / $0.8870 | Buy Now |
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DISTI #
SIR640ADP-T1-GE3
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Avnet Americas | N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIR640ADP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
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$0.7488 / $0.7898 | Buy Now |
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DISTI #
78-SIR640ADP-T1-GE3
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Mouser Electronics | MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 8087 |
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$0.8050 / $2.1300 | Buy Now |
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DISTI #
V99:2348_09216149
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Arrow Electronics | Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2347 | Americas - 5330 |
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$0.7869 / $1.0114 | Buy Now |
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DISTI #
76087181
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Verical | Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP Min Qty: 8 Package Multiple: 1 Date Code: 2347 | Americas - 5330 |
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$0.7869 / $0.8064 | Buy Now |
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DISTI #
SIR640ADP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 100A, Idm: 350A Min Qty: 3000 | 0 |
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$0.9800 | RFQ |
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DISTI #
SIR640ADP-T1-GE3
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IBS Electronics | SIR640ADP SERIES 40 V 60 A 2 MOHM N-CHANNEL MOSFET - POWERPAK®, SO-8 Min Qty: 6000 Package Multiple: 1 | 0 |
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$0.9490 | Buy Now |
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DISTI #
SMC-SIR640ADP-T1-GE3
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 2951 |
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RFQ | |
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DISTI #
SIR640ADP-T1-GE3
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Avnet Asia | N-CHANNEL 40-V (D-S) MOSFET (Alt: SIR640ADP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
SIR640ADP-T1-GE3
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EBV Elektronik | NCHANNEL 40V DS MOSFET (Alt: SIR640ADP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR640ADP-T1-GE3
SIR640ADP-T1-GE3 CAD Models
SIR640ADP-T1-GE3 Part Data Attributes
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SIR640ADP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR640ADP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 350 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIR640ADP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SIR640ADP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay Power MOSFETs' (document number: 41551).
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To ensure reliability in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device should be operated within its specified temperature range and derated accordingly.
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Vishay Intertechnologies recommends following the ESD protection guidelines outlined in the JEDEC standard JESD625-A, which includes handling and storage precautions, as well as the use of ESD-protective packaging and materials.
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While the SIR640ADP-T1-GE3 is not specifically designed for automotive applications, it can be used in certain automotive systems. However, it is essential to ensure the device meets the specific requirements of the automotive application, including temperature range, voltage, and reliability. Consult with Vishay Intertechnologies' application engineers for guidance.
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Vishay Intertechnologies recommends following the soldering profile guidelines outlined in the IPC/JEDEC standard J-STD-020, which provides guidelines for the soldering of electronic components.