-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SIR618DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIR618DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
SIR618DP-T1-GE3 Information
SIR618DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SIR618DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
20AC3888
|
Newark | N-Channel 200V (D-S) Mosfet |Vishay SIR618DP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4770 / $0.4870 | Buy Now |
|
DISTI #
SIR618DP-T1-GE3
|
Avnet Americas | N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIR618DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
|
$0.4002 / $0.4169 | Buy Now |
|
DISTI #
78-SIR618DP-T1-GE3
|
Mouser Electronics | MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 19426 |
|
$0.4370 / $1.2900 | Buy Now |
|
DISTI #
V36:1790_17600347
|
Arrow Electronics | Trans MOSFET N-CH 200V 14.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks Date Code: 2419 | Americas - 5980 |
|
$0.4050 / $0.6599 | Buy Now |
|
DISTI #
81024108
|
Verical | Trans MOSFET N-CH 200V 14.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 15 Package Multiple: 1 Date Code: 2419 | Americas - 5980 |
|
$0.4050 / $0.5782 | Buy Now |
|
DISTI #
SIR618DP-T1-GE3
|
TTI | MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.4070 / $0.4400 | Buy Now |
|
DISTI #
SIR618DP-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 200V, 14.2A, Idm: 30A Min Qty: 3000 | 0 |
|
$0.6200 | RFQ |
|
DISTI #
SIR618DP-T1-GE3
|
EBV Elektronik | NCHANNEL 200V DS MOSFET (Alt: SIR618DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Vyrian | Transistors | 8112 |
|
RFQ |
Part Details for SIR618DP-T1-GE3
SIR618DP-T1-GE3 CAD Models
SIR618DP-T1-GE3 Part Data Attributes
|
|
SIR618DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIR618DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Date Of Intro | 2016-07-19 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 14.2 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 44 ns | |
| Turn-on Time-Max (ton) | 50 ns |
SIR618DP-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended PCB footprint for the SIR618DP-T1-GE3 is a pad layout with a minimum size of 2.5 mm x 2.5 mm, with a thermal pad size of 1.5 mm x 1.5 mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
-
To ensure proper soldering, use a soldering iron with a temperature range of 250°C to 260°C. Apply a small amount of solder paste to the PCB pads, and then place the SIR618DP-T1-GE3 on the pads. Use a reflow oven or a hot air gun to solder the component. Make sure to follow the recommended soldering profile to prevent damage to the component.
-
The maximum operating temperature range for the SIR618DP-T1-GE3 is -55°C to 150°C. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
-
To prevent damage, store the SIR618DP-T1-GE3 in its original packaging or in a dry, cool place away from direct sunlight. Avoid exposing the component to moisture, extreme temperatures, or physical stress during shipping and storage.
-
To prevent electrostatic discharge (ESD) damage, handle the SIR618DP-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, or bags. Ensure that the workspace is ESD-safe, and avoid touching the component's pins or leads with bare hands.