Part Details for SIR426DP-T1-GE3 by Vishay Siliconix
Results Overview of SIR426DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
SIR426DP-T1-GE3 Information
SIR426DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SIR426DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR426DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 40V 30A PPAK SO-8 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16646 In Stock |
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$0.3783 / $1.2000 | Buy Now |
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DISTI #
70459585
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RS | 40V 30A 41.7W 10.5mohm @ 10V Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$1.1300 | RFQ |
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New Advantage Corporation | Single N-Channel 40 V 12.5 mOhm 9.3 nC 41.7 W SMT Mosfet - PowerPAK SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
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$0.6000 / $0.6500 | Buy Now |
Part Details for SIR426DP-T1-GE3
SIR426DP-T1-GE3 CAD Models
SIR426DP-T1-GE3 Part Data Attributes
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SIR426DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIR426DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 40V 15.9A 8-Pin PowerPAK SO
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 41.7 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIR426DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR426DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR426DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC059N04LSGATMA1 | Infineon Technologies AG | $0.5753 | Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR426DP-T1-GE3 vs BSC059N04LSGATMA1 |
| SIR426DP-T1-GE3 | Vishay Intertechnologies | $0.5889 | Power Field-Effect Transistor, 30A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | SIR426DP-T1-GE3 vs SIR426DP-T1-GE3 |
| SIR880DP-T1-GE3 | Vishay Intertechnologies | $1.1792 | Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SIR426DP-T1-GE3 vs SIR880DP-T1-GE3 |
| BSC360N15NS3GATMA1 | Infineon Technologies AG | $1.2105 | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR426DP-T1-GE3 vs BSC360N15NS3GATMA1 |
| SIR804DP-T1-GE3 | Vishay Intertechnologies | $2.0950 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SIR426DP-T1-GE3 vs SIR804DP-T1-GE3 |
| BSC520N15NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR426DP-T1-GE3 vs BSC520N15NS3G |
| SIR166DP-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | SIR426DP-T1-GE3 vs SIR166DP-T1-GE3 |
| BSC027N04LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR426DP-T1-GE3 vs BSC027N04LSG |
| BSC059N04LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR426DP-T1-GE3 vs BSC059N04LSG |
| BSC360N15NS3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SIR426DP-T1-GE3 vs BSC360N15NS3G |
SIR426DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SIR426DP-T1-GE3 is a rectangle with dimensions of 5.0 mm x 2.5 mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult with a PCB design expert to ensure optimal thermal performance.
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To ensure the SIR426DP-T1-GE3 operates within its SOA, monitor the device's voltage, current, and temperature. Use a thermal management strategy, such as a heat sink or thermal interface material, to keep the junction temperature below 150°C. Also, ensure the device is not exposed to excessive voltage or current stress.
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The maximum allowed voltage derating for the SIR426DP-T1-GE3 is 80% of the maximum rated voltage. This means that if the maximum rated voltage is 100 V, the maximum allowed voltage derating would be 80 V. However, it's recommended to consult with a design expert to determine the optimal voltage derating for your specific application.
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The SIR426DP-T1-GE3 is a commercial-grade device, and its use in high-reliability or aerospace applications may require additional testing and qualification. It's recommended to consult with a design expert and the manufacturer to determine the device's suitability for such applications.
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To handle the SIR426DP-T1-GE3's ESD sensitivity, follow proper ESD handling procedures, such as using ESD-protective packaging, wrist straps, and mats. Ensure that all personnel handling the device are properly grounded, and avoid touching the device's pins or leads.