Part Details for SIR422DP-T1-GE3 by Vishay Siliconix
Results Overview of SIR422DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SIR422DP-T1-GE3 Information
SIR422DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIR422DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR422DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 40V 40A PPAK SO-8 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
45593 In Stock |
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$0.4250 / $1.2200 | Buy Now |
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DISTI #
70026400
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RS | MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 0.0054Ohm, ID 20A, PowerPak SO-8, -55de Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk | 2995 |
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$0.3700 | Buy Now |
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New Advantage Corporation | SIR422 Series 40 V 0.0066 Ohm 48 nC Single N-Channel Power Mosfet POWERPAK-SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 21000 |
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$0.6615 / $0.7167 | Buy Now |
Part Details for SIR422DP-T1-GE3
SIR422DP-T1-GE3 CAD Models
SIR422DP-T1-GE3 Part Data Attributes
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SIR422DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIR422DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 40V 20.5A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 20.5 A | |
| Drain-source On Resistance-Max | 0.0066 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 34.7 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIR422DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIR422DP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
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Yes, the SIR422DP-T1-GE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing procedures. However, it's essential to follow proper design, assembly, and testing guidelines to ensure the component meets the required reliability standards.
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To prevent damage during assembly, handle the SIR422DP-T1-GE3 by the body, avoid touching the leads or the component's surface, and use anti-static wrist straps or mats to prevent electrostatic discharge (ESD).
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The maximum allowable voltage derating for the SIR422DP-T1-GE3 is typically 80% of the rated voltage, but this may vary depending on the specific application and environmental conditions. Consult the datasheet and application notes for more information.
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The SIR422DP-T1-GE3 is rated for operation up to 150°C, but it's essential to consider the component's power dissipation, thermal resistance, and the overall system design to ensure reliable operation in high-temperature environments.