Part Details for SIR414DP-T1-GE3 by Vishay Siliconix
Results Overview of SIR414DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
SIR414DP-T1-GE3 Information
SIR414DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIR414DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR414DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 40V 50A PPAK SO-8 Min Qty: 1 Lead time: 19 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1594 In Stock |
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$0.6595 / $1.9400 | Buy Now |
Part Details for SIR414DP-T1-GE3
SIR414DP-T1-GE3 CAD Models
SIR414DP-T1-GE3 Part Data Attributes
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SIR414DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SIR414DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 5.4 W | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 77 ns |
SIR414DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIR414DP-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
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Yes, SIR414DP-T1-GE3 is suitable for high-reliability applications due to its high-quality construction, rigorous testing, and compliance with industry standards such as AEC-Q101.
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To prevent ESD damage, handle SIR414DP-T1-GE3 with ESD-protective equipment, wear an ESD strap, and ensure the workspace is ESD-safe. Avoid touching the component's pins or leads.
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The recommended soldering profile for SIR414DP-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a preheat temperature of 150-180°C.
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Yes, SIR414DP-T1-GE3 is AEC-Q101 qualified, making it suitable for automotive applications, including under-the-hood and in-cabin systems.