Part Details for SIR401DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIR401DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIR401DP-T1-GE3 Information
SIR401DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIR401DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
2283664RL
|
Farnell | MOSFET, P-CH, -20V, PPAK-SO8 RoHS: Compliant Min Qty: 100 Lead time: 23 Weeks, 1 Days Container: Reel | 6764 |
|
$0.4446 / $0.6026 | Buy Now |
|
DISTI #
2283664
|
Farnell | MOSFET, P-CH, -20V, PPAK-SO8 RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Each | 6764 |
|
$0.4446 / $1.2716 | Buy Now |
|
DISTI #
SIR401DP-T1-GE3
|
Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIR401DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.3398 / $0.3500 | Buy Now |
|
DISTI #
78-SIR401DP-T1-GE3
|
Mouser Electronics | MOSFETs -20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant | 7779 |
|
$0.3880 / $1.1600 | Buy Now |
|
DISTI #
V72:2272_09215726
|
Arrow Electronics | Trans MOSFET P-CH 20V 50A 8-Pin PowerPAK SO T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2303 Container: Cut Strips | Americas - 6 |
|
$0.3759 | Buy Now |
|
DISTI #
SIR401DP-T1-GE3
|
TTI | MOSFETs -20V Vds 12V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 3000 In Stock |
|
$0.3450 / $0.3880 | Buy Now |
|
DISTI #
SIR401DP-T1-GE3
|
TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -50A, Idm: -80A Min Qty: 3000 | 0 |
|
$0.5760 | RFQ |
|
DISTI #
SIR401DP-T1-GE3
|
IBS Electronics | VISHAY SIR401DP-T1-GE3 MOSFET TRANSISTOR P CHANNEL 50 A -20 V 0.0025 OHM -10 V -600 MV Min Qty: 3000 Package Multiple: 1 | 0 |
|
$0.5265 / $0.5395 | Buy Now |
|
DISTI #
SIR401DP-T1-GE3
|
EBV Elektronik | PCHANNEL 20V DS MOSFET (Alt: SIR401DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIR401DP-T1-GE3
SIR401DP-T1-GE3 CAD Models
SIR401DP-T1-GE3 Part Data Attributes
|
|
SIR401DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIR401DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 20V, 0.0032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIR401DP-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended land pattern for SIR401DP-T1-GE3 is available in the Vishay Intertechnologies' website, under the 'Packaging' section. It provides a detailed layout and dimension guide for proper PCB design and assembly.
-
To ensure reliability in high-temperature applications, follow the recommended derating guidelines provided in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat dissipation, and ensure proper PCB design and thermal management.
-
The maximum allowable voltage for the SIR401DP-T1-GE3 is 100 V, as specified in the datasheet. Exceeding this voltage may result in device damage or failure.
-
Yes, the SIR401DP-T1-GE3 is suitable for high-frequency applications. However, it's essential to consider the device's parasitic inductance and capacitance, as well as the PCB layout and design, to minimize signal degradation and ensure optimal performance.
-
The typical lead time for SIR401DP-T1-GE3 may vary depending on the region, distributor, and availability. It's recommended to check with authorized distributors or Vishay Intertechnologies' website for the most up-to-date lead time information.