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Power Field-Effect Transistor,
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SIR186DP-T1-RE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
26AK9904
|
Newark | N-Channel 60-V (D-S) Mosfet |Vishay SIR186DP-T1-RE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3736 |
|
$0.4290 | Buy Now |
DISTI #
37AC0918
|
Newark | Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.6V Rohs Compliant: Yes |Vishay SIR186DP-T1-RE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2403 |
|
$0.4550 | Buy Now |
DISTI #
59AC7438
|
Newark | N-Channel 60-V (D-S) Mosfet |Vishay SIR186DP-T1-RE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.5210 / $0.6930 | Buy Now |
DISTI #
SIR186DP-T1-RE3
|
Avnet Americas | N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SIR186DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 3000 |
|
$0.4288 / $0.4556 | Buy Now |
DISTI #
26AK9904
|
Avnet Americas | N-CHANNEL 60-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 26AK9904) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 3736 Partner Stock |
|
$0.6750 / $1.4200 | Buy Now |
DISTI #
37AC0918
|
Avnet Americas | N-CHANNEL 60-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 37AC0918) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 2403 Partner Stock |
|
$0.8580 / $1.6000 | Buy Now |
DISTI #
78-SIR186DP-T1-RE3
|
Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 9495 |
|
$0.4620 / $1.6100 | Buy Now |
DISTI #
E02:0323_12504492
|
Arrow Electronics | Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 78 Weeks Date Code: 2350 | Europe - 6000 |
|
$0.4693 | Buy Now |
DISTI #
82697931
|
Verical | Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Date Code: 2350 | Americas - 6000 |
|
$0.4729 | Buy Now |
DISTI #
SIR186DP-T1-RE3
|
TTI | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.4450 / $0.4620 | Buy Now |
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SIR186DP-T1-RE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR186DP-T1-RE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SOP-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 31.25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 29 pF | |
JESD-30 Code | R-PDSO-F5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 46 ns | |
Turn-on Time-Max (ton) | 64 ns |
The recommended land pattern for the SIR186DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
To ensure reliability in high-temperature applications, it is essential to follow the recommended derating guidelines for the SIR186DP-T1-RE3. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
Vishay Intertechnologies recommends following the ESD protection guidelines outlined in the JEDEC standard JESD625-A. Additionally, consider using ESD protection devices, such as TVS diodes, to protect the SIR186DP-T1-RE3 from electrostatic discharge.
Yes, the SIR186DP-T1-RE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
The recommended soldering conditions for the SIR186DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Soldering Recommendations for Vishay's Power MOSFETs' (document number: 41552).