Datasheets
SIR186DP-T1-RE3 by:

Power Field-Effect Transistor,

Part Details for SIR186DP-T1-RE3 by Vishay Intertechnologies

Results Overview of SIR186DP-T1-RE3 by Vishay Intertechnologies

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SIR186DP-T1-RE3 Information

SIR186DP-T1-RE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIR186DP-T1-RE3

Part # Distributor Description Stock Price Buy
DISTI # 26AK9904
Newark N-Channel 60-V (D-S) Mosfet |Vishay SIR186DP-T1-RE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3736
  • 1 $0.4290
  • 10 $0.4290
  • 25 $0.4290
  • 50 $0.4290
  • 100 $0.4290
$0.4290 Buy Now
DISTI # 37AC0918
Newark Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.6V Rohs Compliant: Yes |Vishay SIR186DP-T1-RE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2403
  • 1 $0.4550
  • 10 $0.4550
  • 25 $0.4550
  • 50 $0.4550
  • 100 $0.4550
$0.4550 Buy Now
DISTI # 59AC7438
Newark N-Channel 60-V (D-S) Mosfet |Vishay SIR186DP-T1-RE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.6930
  • 1,000 $0.6670
  • 2,000 $0.6090
  • 4,000 $0.5500
  • 6,000 $0.5320
  • 10,000 $0.5210
$0.5210 / $0.6930 Buy Now
DISTI # SIR186DP-T1-RE3
Avnet Americas N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SIR186DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.4556
  • 6,000 $0.4483
  • 12,000 $0.4413
  • 18,000 $0.4339
  • 24,000 $0.4288
$0.4288 / $0.4556 Buy Now
DISTI # 26AK9904
Avnet Americas N-CHANNEL 60-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 26AK9904) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 3736 Partner Stock
  • 1 $1.4200
  • 10 $0.9600
  • 25 $0.8650
  • 50 $0.7700
  • 100 $0.6750
$0.6750 / $1.4200 Buy Now
DISTI # 37AC0918
Avnet Americas N-CHANNEL 60-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 37AC0918) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 2403 Partner Stock
  • 1 $1.6000
  • 10 $1.1400
  • 25 $1.0500
  • 50 $0.9530
  • 100 $0.8580
$0.8580 / $1.6000 Buy Now
DISTI # 78-SIR186DP-T1-RE3
Mouser Electronics MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 9495
  • 1 $1.6100
  • 10 $1.0700
  • 25 $1.0500
  • 100 $0.7570
  • 500 $0.6100
  • 1,000 $0.5580
  • 3,000 $0.4990
  • 6,000 $0.4620
$0.4620 / $1.6100 Buy Now
DISTI # E02:0323_12504492
Arrow Electronics Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 78 Weeks Date Code: 2350 Europe - 6000
  • 6,000 $0.4693
$0.4693 Buy Now
DISTI # 82697931
Verical Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Date Code: 2350 Americas - 6000
  • 6,000 $0.4729
$0.4729 Buy Now
DISTI # SIR186DP-T1-RE3
TTI MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.4620
  • 9,000 $0.4530
  • 18,000 $0.4450
$0.4450 / $0.4620 Buy Now
DISTI # SIR186DP-T1-RE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 60A, Idm: 150A, 57W Min Qty: 3000 0
  • 3,000 $0.6500
$0.6500 RFQ
DISTI # SIR186DP-T1-RE3
IBS Electronics TRANSISTOR MOSFET N-CH 60V 60A 8-PIN POWERPAK SO Min Qty: 3000 Package Multiple: 1 0
  • 3,000 $0.8840
$0.8840 Buy Now
DISTI # SIR186DP-T1-RE3
EBV Elektronik NCHANNEL 60V DS MOSFET (Alt: SIR186DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 23A 4.5m10V15A 5W 2V 1 N-channel PowerPAKSO-8 MOSFETs ROHS 50
  • 1 $0.9505
  • 10 $0.9291
  • 30 $0.9153
  • 100 $0.9016
$0.9016 / $0.9505 Buy Now

Part Details for SIR186DP-T1-RE3

SIR186DP-T1-RE3 CAD Models

SIR186DP-T1-RE3 Part Data Attributes

SIR186DP-T1-RE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR186DP-T1-RE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 31.25 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 29 pF
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 150 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 46 ns
Turn-on Time-Max (ton) 64 ns

SIR186DP-T1-RE3 Related Parts

SIR186DP-T1-RE3 Frequently Asked Questions (FAQ)

  • The recommended land pattern for the SIR186DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).

  • To ensure reliability in high-temperature applications, it is essential to follow the recommended derating guidelines for the SIR186DP-T1-RE3. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.

  • Vishay Intertechnologies recommends following the ESD protection guidelines outlined in the JEDEC standard JESD625-A. Additionally, consider using ESD protection devices, such as TVS diodes, to protect the SIR186DP-T1-RE3 from electrostatic discharge.

  • Yes, the SIR186DP-T1-RE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.

  • The recommended soldering conditions for the SIR186DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Soldering Recommendations for Vishay's Power MOSFETs' (document number: 41552).

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