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Part Details for SIR158DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIR158DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
SIR158DP-T1-GE3 Information
SIR158DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SIR158DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
15AC8639
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Newark | Mosfet, N-Ch, 30V, 60A, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.00145Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Vishay SIR158DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 6067 |
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$1.6300 / $2.2900 | Buy Now |
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DISTI #
15R4875
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIR158DP-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8420 / $0.9940 | Buy Now |
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DISTI #
SIR158DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR158DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.7177 / $0.7625 | Buy Now |
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DISTI #
781-SIR158DP-GE3
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Mouser Electronics | MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 8986 |
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$0.7620 / $2.3600 | Buy Now |
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DISTI #
E02:0323_00531338
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Arrow Electronics | Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks Date Code: 2402 | Europe - 3000 |
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$0.8310 | Buy Now |
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DISTI #
77273492
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Verical | Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2402 | Americas - 3000 |
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$0.8399 | Buy Now |
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Bristol Electronics | 1750 |
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RFQ | ||
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Bristol Electronics | 580 |
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RFQ | ||
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Quest Components | 1400 |
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$1.9980 / $3.9960 | Buy Now | |
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Quest Components | 464 |
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$2.0535 / $3.3300 | Buy Now |
Part Details for SIR158DP-T1-GE3
SIR158DP-T1-GE3 CAD Models
SIR158DP-T1-GE3 Part Data Attributes
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SIR158DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR158DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIR158DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIR158DP-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
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Yes, SIR158DP-T1-GE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.
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During soldering, ensure the component is exposed to a maximum temperature of 260°C for 10 seconds or less, and use a soldering iron with a temperature range of 200°C to 240°C.
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Yes, SIR158DP-T1-GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
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For optimal performance, it is recommended to use a PCB layout with a solid ground plane, minimal track length, and a via-in-pad design to reduce parasitic inductance.