Datasheets
SIHG460B-GE3 by:

Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,

Part Details for SIHG460B-GE3 by Vishay Intertechnologies

Results Overview of SIHG460B-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

SIHG460B-GE3 Information

SIHG460B-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIHG460B-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHG460B-GE3
Avnet Americas N-CHANNEL 500V - Tape and Reel (Alt: SIHG460B-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 111 Weeks, 0 Days Container: Reel 0
  • 500 $2.0384
  • 1,000 $2.0280
  • 2,000 $2.0176
  • 3,000 $2.0072
  • 4,000 $1.9968
$1.9968 / $2.0384 Buy Now
DISTI # SIHG460B-GE3
TME Transistor: N-MOSFET, unipolar, 500V, 13A, Idm: 62A, 278W, TO247AC Min Qty: 1 0
  • 1 $2.8000
  • 5 $2.5200
  • 25 $2.2300
  • 100 $2.0000
  • 500 $1.8700
$1.8700 / $2.8000 RFQ

Part Details for SIHG460B-GE3

SIHG460B-GE3 CAD Models

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SIHG460B-GE3 Part Data Attributes

SIHG460B-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHG460B-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 281 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 62 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHG460B-GE3

This table gives cross-reference parts and alternative options found for SIHG460B-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG460B-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP460N International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN SIHG460B-GE3 vs IRFP460N
SIHG460B-GE3 Vishay Siliconix Check for Price TRANSISTOR POWER, FET, FET General Purpose Power SIHG460B-GE3 vs SIHG460B-GE3
Part Number Manufacturer Composite Price Description Compare
FDP20N50F onsemi $2.0006 Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 20 A, 260 mΩ, TO-220, TO-220-3, 1000-TUBE SIHG460B-GE3 vs FDP20N50F
IRFP460BPBF Vishay Intertechnologies $2.2933 Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, SIHG460B-GE3 vs IRFP460BPBF
STP20NM50FD STMicroelectronics $2.4784 N-Channel 500V - 0.22Ohm - 20A - TO-220 FDmesh(TM) POWER MOSFET (with FAST DIODE) SIHG460B-GE3 vs STP20NM50FD
IXTM21N50 New Jersey Semiconductor Products Inc Check for Price Power Field-Effect Transistor SIHG460B-GE3 vs IXTM21N50
IXFH21N50Q IXYS Corporation Check for Price Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN SIHG460B-GE3 vs IXFH21N50Q
APT5024BFLL Microsemi Corporation Check for Price Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN SIHG460B-GE3 vs APT5024BFLL
APT5024BLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN SIHG460B-GE3 vs APT5024BLLG
FQH18N50V2 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN SIHG460B-GE3 vs FQH18N50V2
FDA20N50-F109 onsemi Check for Price Power MOSFET, N-Channel, UniFETTM, 500 V, 22 A, 230 mΩ, TO-3P, TO-3PN 3L, 450-TUBE SIHG460B-GE3 vs FDA20N50-F109
APT5024BFLLG Microsemi Corporation Check for Price Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN SIHG460B-GE3 vs APT5024BFLLG

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