Part Details for SIHG20N50C-E3 by Vishay Siliconix
Results Overview of SIHG20N50C-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SIHG20N50C-E3 Information
SIHG20N50C-E3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHG20N50C-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHG20N50C-E3-ND
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DigiKey | MOSFET N-CH 500V 20A TO247AC Min Qty: 1 Lead time: 14 Weeks Container: Tube |
1377 In Stock |
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$1.4136 / $4.0200 | Buy Now |
Part Details for SIHG20N50C-E3
SIHG20N50C-E3 CAD Models
SIHG20N50C-E3 Part Data Attributes
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SIHG20N50C-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHG20N50C-E3
Vishay Siliconix
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-247AC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 361 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 292 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHG20N50C-E3
This table gives cross-reference parts and alternative options found for SIHG20N50C-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG20N50C-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHG20N50C-E3 | Vishay Intertechnologies | $1.4165 | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | SIHG20N50C-E3 vs SIHG20N50C-E3 |
| SSF20N50UH | Suzhou Good-Ark Electronics Co Ltd | Check for Price | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | SIHG20N50C-E3 vs SSF20N50UH |
| NTE2970 | NTE Electronics Inc | Check for Price | Power Field-Effect Transistor, 22A I(D), 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | SIHG20N50C-E3 vs NTE2970 |
| SMK2050CI | Kodenshi Sensing | Check for Price | 20A, 500V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | SIHG20N50C-E3 vs SMK2050CI |
| AP18N50W | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, TO-3P, 3 PIN, FET General Purpose Power | SIHG20N50C-E3 vs AP18N50W |
SIHG20N50C-E3 Frequently Asked Questions (FAQ)
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The maximum allowed power dissipation for the SIHG20N50C-E3 is dependent on the thermal resistance of the module and the ambient temperature. According to the datasheet, the maximum power dissipation is approximately 250W at a case temperature of 25°C.
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To ensure the reliability of the SIHG20N50C-E3 in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the module. Additionally, the module should be operated within the recommended temperature range to prevent thermal overstress.
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The recommended gate drive voltage for the SIHG20N50C-E3 is between 10V and 20V, with a typical value of 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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Yes, the SIHG20N50C-E3 can be used in parallel to increase current handling capability. However, it is essential to ensure that the modules are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
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The maximum allowed dv/dt for the SIHG20N50C-E3 is 10kV/μs. Exceeding this value can lead to premature failure of the module.