Part Details for SIHF530STRL-GE3 by Vishay Siliconix
Results Overview of SIHF530STRL-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
SIHF530STRL-GE3 Information
SIHF530STRL-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHF530STRL-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
742-SIHF530STRL-GE3CT-ND
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DigiKey | MOSFET N-CH 100V 14A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
560 In Stock |
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$0.3875 / $1.2900 | Buy Now |
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DISTI #
70615640
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RS | SIHF530STRL-GE3 N-channel MOSFET Transistor, 14 A, 100 V, 3-Pin D2PAK Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.9200 / $2.2600 | RFQ |
Part Details for SIHF530STRL-GE3
SIHF530STRL-GE3 CAD Models
SIHF530STRL-GE3 Part Data Attributes
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SIHF530STRL-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHF530STRL-GE3
Vishay Siliconix
TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 69 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 88 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHF530STRL-GE3
This table gives cross-reference parts and alternative options found for SIHF530STRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF530STRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHF530S-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | SIHF530STRL-GE3 vs SIHF530S-GE3 |
| IRF530STRL | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | SIHF530STRL-GE3 vs IRF530STRL |
| IRF530STR | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | SIHF530STRL-GE3 vs IRF530STR |
| IRF530STRL | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | SIHF530STRL-GE3 vs IRF530STRL |
SIHF530STRL-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SIHF530STRL-GE3 is a rectangular pad with a size of 5.3 mm x 3.3 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
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To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux to the pads. Also, make sure the PCB is clean and free of oxidation.
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The maximum operating temperature range for the SIHF530STRL-GE3 is -55°C to 150°C, with a derating of 1.33% per °C above 125°C.
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Yes, the SIHF530STRL-GE3 is designed to withstand high-vibration environments, with a vibration rating of 10 G peak acceleration, 10 Hz to 2000 Hz, and 3 axes.
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Yes, the SIHF530STRL-GE3 is RoHS (Restriction of Hazardous Substances) and REACH (Registration, Evaluation, Authorization, and Restriction of Chemicals) compliant, meeting the requirements of EU directives 2011/65/EU and 1907/2006/EC, respectively.