Part Details for SIHD14N60E-GE3 by Vishay Intertechnologies
Results Overview of SIHD14N60E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Industrial Automation
Aerospace and Defense
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
SIHD14N60E-GE3 Information
SIHD14N60E-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIHD14N60E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
80AK5262
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Newark | Mosfet, N-Ch, 600V, 13A, To-252 Rohs Compliant: Yes |Vishay SIHD14N60E-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1558 |
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$1.6400 / $2.7700 | Buy Now |
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DISTI #
SIHD14N60E-GE3
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Avnet Americas | Power MOSFET, N Channel, 600 V, 13 A, 0.269 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: SIHD14N60E-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.8718 / $0.9263 | Buy Now |
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DISTI #
78-SIHD14N60E-GE3
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Mouser Electronics | MOSFETs 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 11645 |
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$0.9260 / $1.7600 | Buy Now |
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DISTI #
V36:1790_17600318
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Arrow Electronics | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks Date Code: 2346 | Americas - 4026 |
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$0.9041 / $1.1038 | Buy Now |
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DISTI #
80016392
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Verical | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK Min Qty: 7 Package Multiple: 1 Date Code: 2346 | Americas - 4026 |
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$0.9041 / $1.1038 | Buy Now |
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DISTI #
69060910
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Verical | Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK Min Qty: 31 Package Multiple: 1 Date Code: 2317 | Americas - 74 |
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$1.1400 | Buy Now |
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DISTI #
SIHD14N60E-GE3
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TTI | MOSFETs 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Tube | Americas - 0 |
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$0.9200 / $0.9300 | Buy Now |
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DISTI #
SIHD14N60E-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 8A, Idm: 32A, 147W, DPAK,TO252 Min Qty: 1 | 0 |
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$1.4300 / $2.1300 | RFQ |
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DISTI #
SIHD14N60E-GE3
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EBV Elektronik | Power MOSFET N Channel 600 V 13 A 0269 ohm TO252 DPAK Surface Mount (Alt: SIHD14N60E-GE3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 15 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHD14N60E-GE3
SIHD14N60E-GE3 CAD Models
SIHD14N60E-GE3 Part Data Attributes
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SIHD14N60E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHD14N60E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Date Of Intro | 2016-05-10 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 136 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.309 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHD14N60E-GE3
This table gives cross-reference parts and alternative options found for SIHD14N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD14N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB60R280C6ATMA1 | Infineon Technologies AG | $0.9649 | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | SIHD14N60E-GE3 vs IPB60R280C6ATMA1 |
| SIHH14N65EF-T1-GE3 | Vishay Intertechnologies | $3.9488 | Power Field-Effect Transistor, 15A I(D), 650V, 0.271ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | SIHD14N60E-GE3 vs SIHH14N65EF-T1-GE3 |
| IXKP13N60C5 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SIHD14N60E-GE3 vs IXKP13N60C5 |
| IXKH13N60C5 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | SIHD14N60E-GE3 vs IXKH13N60C5 |
| STI18N60M2 | STMicroelectronics | Check for Price | N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in I2PAK package | SIHD14N60E-GE3 vs STI18N60M2 |
| IPB60R280C6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | SIHD14N60E-GE3 vs IPB60R280C6 |
| TK15E60U | Toshiba America Electronic Components | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | SIHD14N60E-GE3 vs TK15E60U |
| TK14G65W5 | Toshiba America Electronic Components | Check for Price | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | SIHD14N60E-GE3 vs TK14G65W5 |
| IXKP13N60C5 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | SIHD14N60E-GE3 vs IXKP13N60C5 |
SIHD14N60E-GE3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for SIHD14N60E-GE3 is -55°C to 175°C.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The recommended gate resistor value for SIHD14N60E-GE3 is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.
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To protect the MOSFET from voltage spikes and transients, use a snubber circuit or a TVS (Transient Voltage Suppressor) diode in parallel with the MOSFET, and ensure the circuit is properly decoupled.
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The maximum allowable power dissipation for SIHD14N60E-GE3 is 150W, but this value can be derated based on the operating temperature and other factors.