Part Details for SIE812DF-T1-GE3 by Vishay Intertechnologies
Results Overview of SIE812DF-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SIE812DF-T1-GE3 Information
SIE812DF-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIE812DF-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26R1858
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Newark | N Channel Mosfet, 40V, 60A Polarpak, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Vishay SIE812DF-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
15R4857
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Newark | N Channel Mosfet, 40V, 60A Polarpak, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Vishay SIE812DF-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
SIE812DF-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$1.9680 / $2.0090 | Buy Now |
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DISTI #
SIE812DF-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 60A, Idm: 100A Min Qty: 3000 | 0 |
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$1.8500 | RFQ |
Part Details for SIE812DF-T1-GE3
SIE812DF-T1-GE3 CAD Models
SIE812DF-T1-GE3 Part Data Attributes
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SIE812DF-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIE812DF-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POLARPAK-10
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POLARPAK-10 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0034 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-N4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIE812DF-T1-GE3
This table gives cross-reference parts and alternative options found for SIE812DF-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIE812DF-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIE812DF-T1-GE3 | Vishay Siliconix | Check for Price | N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel | SIE812DF-T1-GE3 vs SIE812DF-T1-GE3 |
| SIE812DF-T1-E3 | Vishay Siliconix | Check for Price | Trans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R | SIE812DF-T1-GE3 vs SIE812DF-T1-E3 |
SIE812DF-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SIE812DF-T1-GE3 is a rectangle with dimensions of 1.3 mm x 0.8 mm, with a 0.5 mm pitch between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
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To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves for the device. Additionally, ensure proper thermal management by providing adequate heat sinking, and consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
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The maximum allowed voltage for the SIE812DF-T1-GE3 is 100 V, as specified in the datasheet. Exceeding this voltage can lead to device failure or reduced lifespan.
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Yes, the SIE812DF-T1-GE3 can be used in switching regulator applications due to its fast switching times and low losses. However, it's essential to ensure that the device is properly driven and that the switching frequency is within the recommended range to prevent overheating and reduce electromagnetic interference (EMI).
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To prevent damage during storage and shipping, it's recommended to store the SIE812DF-T1-GE3 in its original packaging or in a similar antistatic package. Avoid exposing the device to moisture, extreme temperatures, or physical stress. Additionally, handle the device by the body, not the leads, to prevent mechanical stress.