-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SIA931DJ-T1-GE3 by Vishay Intertechnologies
Results Overview of SIA931DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIA931DJ-T1-GE3 Information
SIA931DJ-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIA931DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
40X8668
|
Newark | Mosfet Transistor, Dual P Channel, -4.5 A, -30 V, 0.052 Ohm, -10 V Rohs Compliant: Yes |Vishay SIA931DJ-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 261685 |
|
$0.3400 / $0.6650 | Buy Now |
|
DISTI #
99W9434
|
Newark | Dual P-Channel 30-V (D-S) Mosfet |Vishay SIA931DJ-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1630 / $0.2140 | Buy Now |
|
DISTI #
SIA931DJ-T1-GE3
|
Avnet Americas | DUAL P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIA931DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.1392 / $0.1437 | Buy Now |
|
DISTI #
78-SIA931DJ-T1-GE3
|
Mouser Electronics | MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant | 261096 |
|
$0.1580 / $0.5100 | Buy Now |
|
DISTI #
E02:0323_07504965
|
Arrow Electronics | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Date Code: 2511 | Europe - 3000 |
|
$0.1476 / $0.1512 | Buy Now |
|
DISTI #
V72:2272_09216725
|
Arrow Electronics | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2411 Container: Cut Strips | Americas - 2745 |
|
$0.1475 / $0.2143 | Buy Now |
|
DISTI #
88037644
|
Verical | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2511 | Americas - 3000 |
|
$0.1779 / $0.1937 | Buy Now |
|
DISTI #
80931959
|
Verical | Trans MOSFET P-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 40 Package Multiple: 1 Date Code: 2411 | Americas - 2745 |
|
$0.1475 / $0.1905 | Buy Now |
|
DISTI #
SIA931DJ-T1-GE3
|
TTI | MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.1400 / $0.1550 | Buy Now |
|
DISTI #
SIA931DJ-T1-GE3
|
TTI | MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.1400 / $0.1550 | Buy Now |
Part Details for SIA931DJ-T1-GE3
SIA931DJ-T1-GE3 CAD Models
SIA931DJ-T1-GE3 Part Data Attributes
|
|
SIA931DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIA931DJ-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SC-70, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 45 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 7.8 W | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIA931DJ-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended storage condition for SIA931DJ-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
-
Handle the SIA931DJ-T1-GE3 by the body, avoiding touching the leads or electrical contacts. Use anti-static wrist straps, mats, or other ESD protection methods to prevent electrostatic discharge damage.
-
The maximum allowable voltage for the SIA931DJ-T1-GE3 is 1.5 times the rated voltage (150V) for a maximum of 5 seconds, with a maximum of 10 occurrences.
-
The SIA931DJ-T1-GE3 is rated for operation up to 150°C. However, derating is required for temperatures above 125°C. Consult the datasheet for specific derating guidelines.
-
Use a soldering iron with a temperature of 250°C to 270°C, and a solder with a melting point of 180°C to 200°C. Avoid applying excessive force or bending the leads during soldering.