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Transistors / Power Field-Effect Transistors / SIA469DJ-T1-GE3
Datasheets
SIA469DJ-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SIA469DJ-T1-GE3 by Vishay Intertechnologies

Results Overview of SIA469DJ-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy Automotive

SIA469DJ-T1-GE3 Information

SIA469DJ-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIA469DJ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 10AC9109
Newark Mosfet, P-Ch, 30V, 12A, 150Deg C, 15.6W, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIA469DJ-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 18733
  • 1 $0.1060
  • 10 $0.1060
  • 25 $0.1060
  • 50 $0.1060
$0.1060 Buy Now
DISTI # 20AC3777
Newark P-Channel 30-V (D-S) Mosfet |Vishay SIA469DJ-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 5,000 $0.1600
  • 10,000 $0.1410
  • 20,000 $0.1260
  • 30,000 $0.1170
  • 50,000 $0.1070
$0.1070 / $0.1600 Buy Now
DISTI # SIA469DJ-T1-GE3
Avnet Americas P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIA469DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 15000
  • 3,000 $0.0963
$0.0963 Buy Now
DISTI # 10AC9109
Avnet Americas P-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 10AC9109) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack 98 Partner Stock
  • 1 $0.5760
  • 10 $0.3800
  • 25 $0.3250
  • 50 $0.2690
  • 100 $0.2140
$0.2140 / $0.5760 Buy Now
DISTI # 78-SIA469DJ-T1-GE3
Mouser Electronics MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant 119655
  • 1 $0.4700
  • 10 $0.2940
  • 100 $0.1850
  • 500 $0.1690
  • 1,000 $0.1450
  • 3,000 $0.1000
  • 6,000 $0.0970
  • 9,000 $0.0960
$0.0960 / $0.4700 Buy Now
DISTI # E02:0323_11591075
Arrow Electronics Trans MOSFET P-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Lead time: 15 Weeks Europe - 6000
  • 6,000 $0.1206
$0.1206 Buy Now
DISTI # 29497297
Verical Trans MOSFET P-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Americas - 6000
  • 6,000 $0.2069
$0.2069 Buy Now
DISTI # 66386410
Verical Trans MOSFET P-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 309 Package Multiple: 1 Date Code: 2248 Americas - 2929
  • 309 $0.4510
  • 500 $0.2880
  • 1,000 $0.1770
$0.1770 / $0.4510 Buy Now
DISTI # SIA469DJ-T1-GE3
TTI MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.0970
$0.0970 Buy Now
DISTI # SIA469DJ-T1-GE3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -30V, -12A, Idm: -40A Min Qty: 3 2733
  • 3 $0.2630
  • 25 $0.2370
  • 100 $0.2090
  • 500 $0.1880
  • 3,000 $0.1750
$0.1750 / $0.2630 Buy Now
DISTI # SIA469DJ-T1-GE3
IBS Electronics &#xC5, &#x152, &#xBA, &#xC6, &#x2022, &#x2C6, &#xC5, &#xBA, &#x201D, &#xC7, &#xAE, MOSFET P&#xC6, &#xB2, &#x178, &#xC9, &#x81, &#x201C, -30V -12A POWERPAK SC70 Min Qty: 3000 Package Multiple: 1 15000
  • 3,000 $0.1243
  • 6,000 $0.1223
  • 12,000 $0.1202
  • 15,000 $0.1196
  • 45,000 $0.1157
$0.1157 / $0.1243 Buy Now
DISTI # SIA469DJ-T1-GE3
Avnet Asia P-CHANNEL 30-V (D-S) MOSFET (Alt: SIA469DJ-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days 0
RFQ
DISTI # SIA469DJ-T1-GE3
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 2929
  • 5 $0.4510
  • 50 $0.2880
  • 100 $0.1770
  • 200 $0.1760
  • 500 $0.1620
  • 1,000 $0.1390
  • 6,000 $0.1180
$0.1180 / $0.4510 Buy Now
DISTI # SIA469DJ-T1-GE3
EBV Elektronik PCHANNEL 30V DS MOSFET (Alt: SIA469DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 3000
Buy Now
LCSC 30V 12A 0.026510V5A 10W 3V 1 piece P-channel PowerPAK-SC-70-6-Single MOSFETs ROHS 1250
  • 5 $0.2812
  • 50 $0.2194
  • 150 $0.1928
  • 500 $0.1598
  • 3,000 $0.1291
  • 6,000 $0.1203
$0.1203 / $0.2812 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.2550
$0.2550 Buy Now
Vyrian Transistors 37569
RFQ

Part Details for SIA469DJ-T1-GE3

SIA469DJ-T1-GE3 CAD Models

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SIA469DJ-T1-GE3 Part Data Attributes

Parametric Data
SIA469DJ-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIA469DJ-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SC-70, 6 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks, 3 Days
Date Of Intro 2017-03-22
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0265 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 115 pF
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 15.6 W
Pulsed Drain Current-Max (IDM) 40 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 50 ns

SIA469DJ-T1-GE3 Related Parts

SIA469DJ-T1-GE3 Frequently Asked Questions (FAQ)

  • Store the devices in a dry, cool place, away from direct sunlight, and avoid exposure to moisture, dust, and extreme temperatures.

  • Yes, SIA469DJ-T1-GE3 is a high-reliability device, suitable for use in demanding applications, including aerospace, defense, and industrial control systems.

  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe work surfaces, and storing devices in ESD-protective packaging.

  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30s, and time above 183°C 60s.

  • Yes, SIA469DJ-T1-GE3 is rated for operation up to 150°C, making it suitable for high-temperature applications.

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