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Part Details for SIA447DJ-T1-GE3 by Vishay Intertechnologies
Results Overview of SIA447DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Automotive
SIA447DJ-T1-GE3 Information
SIA447DJ-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIA447DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79AH6462
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Newark | P-Channel 12-V (D-S) Mosfet Rohs Compliant: No |Vishay SIA447DJ-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 30000 |
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Buy Now | |
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DISTI #
62W0504
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Newark | Mosfet Transistor, P Channel, 12 A, -12 V, 0.011 Ohm, -4.5 V, -400 Mv Rohs Compliant: Yes |Vishay SIA447DJ-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1835 |
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$0.1070 | Buy Now |
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DISTI #
27AK1001
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Newark | P-Channel 12-V (D-S) Mosfet |Vishay SIA447DJ-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1345 |
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$0.1270 / $0.5270 | Buy Now |
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DISTI #
99W9421
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Newark | P-Channel 12-V (D-S) Mosfet |Vishay SIA447DJ-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1560 / $0.1640 | Buy Now |
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DISTI #
SIA447DJ-T1-GE3
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Avnet Americas | Power MOSFET, P Channel, 12 V, 12 A, 0.011 ohm, PowerPAK SC-70, Surface Mount - Tape and Reel (Alt: SIA447DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 30000 |
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$0.1316 | Buy Now |
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DISTI #
62W0504
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Avnet Americas | Power MOSFET, P Channel, 12 V, 12 A, 0.011 ohm, PowerPAK SC-70, Surface Mount - Bulk (Alt: 62W0504) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Bulk | 1835 Partner Stock |
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$0.1530 / $0.5480 | Buy Now |
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DISTI #
27AK1001
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Avnet Americas | Power MOSFET, P Channel, 12 V, 12 A, 0.011 ohm, PowerPAK SC-70, Surface Mount - Product that comes on tape, but is not reeled (Alt: 27AK1001) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks, 3 Days Container: Ammo Pack | 1345 Partner Stock |
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$0.1470 / $0.5270 | Buy Now |
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DISTI #
78-SIA447DJ-T1-GE3
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Mouser Electronics | MOSFETs -12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant | 31285 |
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$0.1360 / $0.4200 | Buy Now |
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DISTI #
E02:0323_06007038
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Arrow Electronics | Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2513 | Europe - 15060 |
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$0.1421 / $0.4179 | Buy Now |
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DISTI #
V72:2272_09216842
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Arrow Electronics | Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2243 Container: Cut Strips | Americas - 2034 |
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$0.1413 / $0.1770 | Buy Now |
Part Details for SIA447DJ-T1-GE3
SIA447DJ-T1-GE3 CAD Models
SIA447DJ-T1-GE3 Part Data Attributes
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SIA447DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA447DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 12V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SC-70, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 585 pF | |
| JESD-30 Code | S-PDSO-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 3.5 W | |
| Power Dissipation-Max (Abs) | 19 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 170 ns | |
| Turn-on Time-Max (ton) | 120 ns |
Alternate Parts for SIA447DJ-T1-GE3
This table gives cross-reference parts and alternative options found for SIA447DJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA447DJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIA447DJ-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | SIA447DJ-T1-GE3 vs SIA447DJ-T1-GE3 |
SIA447DJ-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIA447DJ-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
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Yes, SIA447DJ-T1-GE3 is suitable for high-reliability applications due to its high-quality materials, robust design, and rigorous testing procedures.
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To prevent electrostatic discharge (ESD) damage, handle SIA447DJ-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper handling procedures.
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The thermal resistance of SIA447DJ-T1-GE3 is typically around 10°C/W, but this value may vary depending on the specific application and operating conditions.
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Yes, SIA447DJ-T1-GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications, including under-the-hood and in-cabin systems.