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Part Details for SIA436DJ-T1-GE3 by Vishay Intertechnologies
Results Overview of SIA436DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIA436DJ-T1-GE3 Information
SIA436DJ-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIA436DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2283648RL
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Farnell | MOSFET N-CH, 8V, SC70-6L RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel | 111471 |
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$0.2229 / $0.3794 | Buy Now |
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DISTI #
2283648
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Farnell | MOSFET N-CH, 8V, SC70-6L RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Cut Tape | 111471 |
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$0.2229 / $0.7788 | Buy Now |
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DISTI #
4320194
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Farnell | MOSFET, N-CH, 8V, 12A, POWERPAK SC-70 RoHS: Compliant Min Qty: 3000 Lead time: 13 Weeks, 1 Days Container: Reel | 0 |
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$0.2282 / $0.2614 | Buy Now |
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DISTI #
SIA436DJ-T1-GE3
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Avnet Americas | Power MOSFET, N Channel, 8 V, 12 A, 0.0078 ohm, PowerPAK SC-70, Surface Mount - Tape and Reel (Alt: SIA436DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 3000 |
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$0.2000 | Buy Now |
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DISTI #
78-SIA436DJ-T1-GE3
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Mouser Electronics | MOSFETs 8V Vds 5V Vgs PowerPAK SC-70 RoHS: Compliant | 51236 |
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$0.2070 / $0.6400 | Buy Now |
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DISTI #
E02:0323_05986529
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Arrow Electronics | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2514 | Europe - 3000 |
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$0.2221 | Buy Now |
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DISTI #
V36:1790_09216838
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Arrow Electronics | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2318 | Americas - 3000 |
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$0.1824 / $0.1928 | Buy Now |
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DISTI #
V72:2272_09216838
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Arrow Electronics | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2316 Container: Cut Strips | Americas - 2 |
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$0.1947 | Buy Now |
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DISTI #
83631685
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Verical | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2318 | Americas - 3000 |
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$0.1824 / $0.1928 | Buy Now |
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DISTI #
88156636
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Verical | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2514 | Americas - 3000 |
|
$0.2585 | Buy Now |
Part Details for SIA436DJ-T1-GE3
SIA436DJ-T1-GE3 CAD Models
SIA436DJ-T1-GE3 Part Data Attributes
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SIA436DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA436DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 8V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, LEADLESS, SC-70, POWERPAK-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, LEADLESS, SC-70, POWERPAK-6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0094 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 19 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SIA436DJ-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended land pattern for the SIA436DJ-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendation for QFN Packages' (document number 37042).
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The thermal pad on the SIA436DJ-T1-GE3 should be connected to a solid ground plane to ensure optimal thermal performance. A thermal via or a thermal pad connection to the ground plane is recommended.
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The maximum operating temperature range for the SIA436DJ-T1-GE3 is -40°C to 150°C, as specified in the datasheet. However, it's essential to consider the derating curves and thermal management to ensure reliable operation.
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Yes, the SIA436DJ-T1-GE3 is qualified for automotive and high-reliability applications. It meets the AEC-Q101 qualification standard and is suitable for use in harsh environments.
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To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided in the datasheet. Additionally, use a solder with a melting point above 217°C to prevent damage to the device.