Part Details for SIA429DJT-T1-GE3 by Vishay Intertechnologies
Results Overview of SIA429DJT-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Communication and Networking
Automotive
Robotics and Drones
SIA429DJT-T1-GE3 Information
SIA429DJT-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIA429DJT-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
57AJ0363
|
Newark | Mosfet, P-Ch, 20V, 12A, Powerpak Sc70 Rohs Compliant: Yes |Vishay SIA429DJT-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2969 |
|
$0.3580 / $0.8790 | Buy Now |
|
DISTI #
65T1633
|
Newark | Mosfet, P-Ch, -20V, Powerpak Sc70-6, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:19W, Msl:- Rohs Compliant: Yes |Vishay SIA429DJT-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1790 / $0.2380 | Buy Now |
|
DISTI #
SIA429DJT-T1-GE3
|
Avnet Americas | P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA429DJT-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.1632 / $0.1688 | Buy Now |
|
DISTI #
781-SIA429DJT-T1-GE3
|
Mouser Electronics | MOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 RoHS: Compliant | 15335 |
|
$0.1770 / $0.7800 | Buy Now |
|
DISTI #
E02:0323_03046298
|
Arrow Electronics | Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2428 | Europe - 3000 |
|
$0.1995 | Buy Now |
|
DISTI #
A03:0893_01991208
|
Arrow Electronics | Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Date Code: 2340 | Asia - 3000 |
|
$0.2384 | Buy Now |
|
DISTI #
83603366
|
Verical | Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2428 | Americas - 3000 |
|
$0.1998 | Buy Now |
|
DISTI #
77251846
|
Verical | Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | Americas - 3000 |
|
$0.2384 | Buy Now |
|
DISTI #
SIA429DJT-T1-GE3
|
TTI | MOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.1750 / $0.1830 | Buy Now |
|
DISTI #
SIA429DJT-T1-GE3
|
TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -12A, Idm: -30A Min Qty: 3000 | 0 |
|
$0.2890 | RFQ |
Part Details for SIA429DJT-T1-GE3
SIA429DJT-T1-GE3 CAD Models
SIA429DJT-T1-GE3 Part Data Attributes
|
|
SIA429DJT-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIA429DJT-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 20V, 0.0205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LAEDLESS, ULTRA THIN, SC-70, POWERPAK-6
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LAEDLESS, ULTRA THIN, SC-70, POWERPAK-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0205 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 19 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIA429DJT-T1-GE3
This table gives cross-reference parts and alternative options found for SIA429DJT-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA429DJT-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AP2613GY-HF | Advanced Power Electronics Corp | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | SIA429DJT-T1-GE3 vs AP2613GY-HF |
| SIA419DJ-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | SIA429DJT-T1-GE3 vs SIA419DJ-T1-GE3 |
SIA429DJT-T1-GE3 Frequently Asked Questions (FAQ)
-
The recommended storage condition for SIA429DJT-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
-
Handle the component in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and avoid touching the component's pins or leads.
-
The maximum allowable voltage for SIA429DJT-T1-GE3 is 150% of the rated voltage, but it's recommended to operate within the specified voltage range for optimal performance and reliability.
-
While SIA429DJT-T1-GE3 can operate up to 150°C, it's essential to consider the derating curve and ensure the component is within its specified operating temperature range to maintain reliability and performance.
-
Use a soldering iron with a temperature range of 250°C to 260°C, and ensure the soldering time is within 3-5 seconds to prevent thermal damage. Use a solder with a melting point above 217°C.