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Part Details for SIA414DJ-T1-GE3 by Vishay Intertechnologies
Results Overview of SIA414DJ-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Security and Surveillance
Audio and Video Systems
Transportation and Logistics
Energy and Power Systems
Renewable Energy
Automotive
Robotics and Drones
SIA414DJ-T1-GE3 Information
SIA414DJ-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIA414DJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
85W0169
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Newark | N Channel Mosfet, 8V, 12A, Sc-70, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:8V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Vishay SIA414DJ-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3600 / $0.4240 | Buy Now |
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DISTI #
16P3612
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Newark | N Channel Mosfet, 8V, 12A, Sc-70, Channel Type:N Channel, Drain Source Voltage Vds:8V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Vishay SIA414DJ-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5750 | Buy Now |
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DISTI #
SIA414DJ-T1-GE3
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Avnet Americas | Power MOSFET, N Channel, 8 V, 12 A, 0.009 ohm, SC-70, Surface Mount - Tape and Reel (Alt: SIA414DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$0.3176 / $0.3375 | Buy Now |
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DISTI #
781-SIA414DJ-T1-GE3
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Mouser Electronics | MOSFETs 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant | 31457 |
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$0.3370 / $0.6600 | Buy Now |
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DISTI #
V72:2272_09216826
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Arrow Electronics | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2239 Container: Cut Strips | Americas - 113 |
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$0.3462 / $0.4881 | Buy Now |
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DISTI #
65227482
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Verical | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 88 Package Multiple: 1 | Americas - 1928 |
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$0.6030 / $1.4600 | Buy Now |
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DISTI #
64141825
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Verical | Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant Min Qty: 17 Package Multiple: 1 Date Code: 2239 | Americas - 113 |
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$0.3462 / $0.4832 | Buy Now |
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Quest Components | 12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET | 4614 |
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$0.3803 / $1.2675 | Buy Now |
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Quest Components | 12A, 8V, 0.011OHM, N-CHANNEL, SI, POWER, MOSFET | 2400 |
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$0.2600 / $1.0000 | Buy Now |
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DISTI #
SIA414DJ-T1-GE3
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TTI | MOSFETs 8.0V 12A 19W 11mohm @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 12000 In Stock |
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$0.3380 / $0.3440 | Buy Now |
Part Details for SIA414DJ-T1-GE3
SIA414DJ-T1-GE3 CAD Models
SIA414DJ-T1-GE3 Part Data Attributes
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SIA414DJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA414DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 8V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-N3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 19 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIA414DJ-T1-GE3
This table gives cross-reference parts and alternative options found for SIA414DJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA414DJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIA414DJ-T1-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR 12 A, 8 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6, FET General Purpose Power | SIA414DJ-T1-GE3 vs SIA414DJ-T1-GE3 |
SIA414DJ-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIA414DJ-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
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Yes, SIA414DJ-T1-GE3 is suitable for high-reliability applications due to its high-quality construction, rigorous testing, and compliance with industry standards such as AEC-Q101.
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To prevent ESD damage, handle SIA414DJ-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper handling and storage procedures.
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The thermal resistance of SIA414DJ-T1-GE3 is typically around 10°C/W, but this value may vary depending on the specific application and operating conditions.
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Yes, SIA414DJ-T1-GE3 is designed to operate in high-temperature environments, with a maximum junction temperature of 150°C, making it suitable for automotive and industrial applications.