Part Details for SIA400EDJ-T1-GE3 by Vishay Siliconix
Results Overview of SIA400EDJ-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
SIA400EDJ-T1-GE3 Information
SIA400EDJ-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIA400EDJ-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIA400EDJ-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 12A PPAK SC70-6 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
149437 In Stock |
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$0.1921 / $0.6600 | Buy Now |
Part Details for SIA400EDJ-T1-GE3
SIA400EDJ-T1-GE3 CAD Models
SIA400EDJ-T1-GE3 Part Data Attributes
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SIA400EDJ-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIA400EDJ-T1-GE3
Vishay Siliconix
TRANSISTOR 12 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SC-70 | |
| Package Description | SMALL OUTLINE, S-PDSO-N3 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 11.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 19.2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIA400EDJ-T1-GE3
This table gives cross-reference parts and alternative options found for SIA400EDJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA400EDJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIA400EDJ-T1-GE3 | Vishay Intertechnologies | $0.4158 | Power Field-Effect Transistor, 12A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | SIA400EDJ-T1-GE3 vs SIA400EDJ-T1-GE3 |
| NVTFS4823NTWG | onsemi | Check for Price | Power MOSFET 30V, 30A, 10.5 mOhm, Single N-Channel, u8FL, Logic Level., WDFN8 3.3x3.3, 0.65P, 5000-REEL, Automotive Qualified | SIA400EDJ-T1-GE3 vs NVTFS4823NTWG |
SIA400EDJ-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SIA400EDJ-T1-GE3 is in a dry, cool place, away from direct sunlight, and in its original packaging or anti-static bag to prevent electrostatic discharge damage.
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While the SIA400EDJ-T1-GE3 is rated for operation up to 150°C, it's essential to consider the derating curves and thermal management to ensure reliable operation. Consult the datasheet and application notes for guidance.
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Handle the SIA400EDJ-T1-GE3 with anti-static wrist straps, mats, or gloves to prevent ESD damage. Ensure the workspace and tools are also ESD-protected.
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Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30s, and total process time 60s. Consult the datasheet and application notes for more information.
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While the SIA400EDJ-T1-GE3 is a high-quality component, it's essential to consult with Vishay Intertechnologies or a qualified representative to determine its suitability for high-reliability or aerospace applications, as additional testing and certification may be required.