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Transistors / Power Field-Effect Transistors / SIA400EDJ-T1-GE3
Datasheets
SIA400EDJ-T1-GE3 by:

Power Field-Effect Transistor, 12A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6

Part Details for SIA400EDJ-T1-GE3 by Vishay Intertechnologies

Results Overview of SIA400EDJ-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Renewable Energy Automotive

SIA400EDJ-T1-GE3 Information

SIA400EDJ-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIA400EDJ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 57AJ0361
Newark Mosfet, N-Ch, 30V, 12A, Powerpak Sc70 Rohs Compliant: Yes |Vishay SIA400EDJ-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1229
  • 1 $0.6750
  • 10 $0.5080
  • 25 $0.4720
  • 50 $0.4370
  • 100 $0.4010
  • 250 $0.3810
  • 500 $0.3600
$0.3600 / $0.6750 Buy Now
DISTI # 99W9411
Newark N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SIA400EDJ-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2380
  • 5,000 $0.2330
  • 10,000 $0.2150
  • 20,000 $0.2000
  • 30,000 $0.1870
  • 50,000 $0.1790
$0.1790 / $0.2380 Buy Now
DISTI # SIA400EDJ-T1-GE3
Avnet Americas Power MOSFET, N Channel, 30 V, 12 A, 0.016 ohm, PowerPAK SC-70, Surface Mount - Tape and Reel (Alt: SIA400EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1688
  • 6,000 $0.1661
  • 12,000 $0.1634
  • 18,000 $0.1607
  • 24,000 $0.1588
$0.1588 / $0.1688 Buy Now
DISTI # 78-SIA400EDJ-T1-GE3
Mouser Electronics MOSFETs 30V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant 22941
  • 1 $0.6100
  • 10 $0.4840
  • 100 $0.3740
  • 500 $0.2790
  • 1,000 $0.2380
  • 3,000 $0.1990
  • 6,000 $0.1900
  • 9,000 $0.1850
$0.1850 / $0.6100 Buy Now
DISTI # V72:2272_07432587
Arrow Electronics Trans MOSFET N-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2238 Container: Cut Strips Americas - 84
  • 1 $0.5956
  • 10 $0.4557
  • 25 $0.1850
$0.1850 / $0.5956 Buy Now
DISTI # 66387710
Verical Trans MOSFET N-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 175 Package Multiple: 1 Date Code: 2245 Americas - 1794
  • 175 $0.2070
$0.2070 Buy Now
DISTI # 64021978
Verical Trans MOSFET N-CH 30V 12A 6-Pin PowerPAK SC-70 EP T/R RoHS: Compliant Min Qty: 61 Package Multiple: 1 Date Code: 2238 Americas - 84
  • 61 $0.1850
$0.1850 Buy Now
DISTI # SIA400EDJ-T1-GE3
TTI MOSFETs 30V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 30000
In Stock
  • 3,000 $0.1970
  • 6,000 $0.1880
  • 9,000 $0.1830
$0.1830 / $0.1970 Buy Now
DISTI # SIA400EDJ-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 12A, Idm: 30A Min Qty: 3 0
  • 3 $0.4590
  • 25 $0.4140
  • 100 $0.3650
  • 500 $0.3280
  • 3,000 $0.3060
$0.3060 / $0.4590 RFQ
DISTI # SIA400EDJ-T1-GE3
IBS Electronics SINGLE N-CHANNEL 30 V 0.025 OHM 17.4 NC 3.5 W SILICON MOSFET - POWERPAK-SC-70-6L Min Qty: 3000 Package Multiple: 1 3000
  • 3,000 $0.2106
  • 6,000 $0.2080
  • 9,000 $0.2067
  • 12,000 $0.2054
  • 15,000 $0.2015
$0.2015 / $0.2106 Buy Now
DISTI # SIA400EDJ-T1-GE3
Avnet Asia Power MOSFET, N Channel, 30 V, 12 A, 0.016 ohm, PowerPAK SC-70, Surface Mount (Alt: SIA400EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 1 Days 0
RFQ
DISTI # SIA400EDJ-T1-GE3
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 1794
  • 5 $0.5360
  • 50 $0.2070
$0.2070 / $0.5360 Buy Now
DISTI # SIA400EDJ-T1-GE3
EBV Elektronik Power MOSFET N Channel 30 V 12 A 0016 ohm PowerPAK SC70 Surface Mount (Alt: SIA400EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 12A 0.0194.5V11A 12.3W 1.5V PowerPAK-SC-70-6L MOSFETs ROHS 950
  • 5 $0.3163
  • 50 $0.2651
  • 150 $0.2431
  • 500 $0.2157
  • 3,000 $0.2035
  • 6,000 $0.1962
$0.1962 / $0.3163 Buy Now
Vyrian Transistors 26720
RFQ

Part Details for SIA400EDJ-T1-GE3

SIA400EDJ-T1-GE3 CAD Models

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SIA400EDJ-T1-GE3 Part Data Attributes

Parametric Data
SIA400EDJ-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIA400EDJ-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 12A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 11.25 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 19.2 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIA400EDJ-T1-GE3

This table gives cross-reference parts and alternative options found for SIA400EDJ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIA400EDJ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NVTFS4823NTWG onsemi Check for Price Power MOSFET 30V, 30A, 10.5 mOhm, Single N-Channel, u8FL, Logic Level., WDFN8 3.3x3.3, 0.65P, 5000-REEL, Automotive Qualified SIA400EDJ-T1-GE3 vs NVTFS4823NTWG

SIA400EDJ-T1-GE3 Related Parts

SIA400EDJ-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended storage condition for SIA400EDJ-T1-GE3 is in a dry, cool place, away from direct sunlight, and in its original packaging or anti-static bag to prevent electrostatic discharge damage.

  • While the SIA400EDJ-T1-GE3 is rated for operation up to 150°C, it's essential to consider the derating curves and thermal management to ensure reliable operation. Consult the datasheet and application notes for guidance.

  • Handle the SIA400EDJ-T1-GE3 with anti-static wrist straps, mats, or gloves to prevent ESD damage. Ensure the workspace and tools are also ESD-protected.

  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30s, and total process time 60s. Consult the datasheet and application notes for more information.

  • While the SIA400EDJ-T1-GE3 is a high-quality component, it's essential to consult with Vishay Intertechnologies or a qualified representative to determine its suitability for high-reliability or aerospace applications, as additional testing and certification may be required.

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