Part Details for SI7997DP-T1-GE3 by Vishay Siliconix
Results Overview of SI7997DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
SI7997DP-T1-GE3 Information
SI7997DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI7997DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7997DP-T1-GE3CT-ND
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DigiKey | MOSFET 2P-CH 30V 60A PPAK SO8 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9331 In Stock |
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$0.8875 / $2.9300 | Buy Now |
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DISTI #
70459570
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RS | -30V 5.5mOhm@10V 60A P-Ch G-III Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$2.0300 | RFQ |
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Quest Components | 60A, 30V, 0.0078OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 67 |
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$1.6632 / $3.0240 | Buy Now |
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|
Chip 1 Exchange | INSTOCK | 14153 |
|
RFQ |
Part Details for SI7997DP-T1-GE3
SI7997DP-T1-GE3 CAD Models
SI7997DP-T1-GE3 Part Data Attributes
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SI7997DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7997DP-T1-GE3
Vishay Siliconix
Trans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0078 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 46 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7997DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7997DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7997DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7997DP-T1-GE3 | Vishay Intertechnologies | $1.1997 | Power Field-Effect Transistor, 60A I(D), 30V, 0.0078ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | SI7997DP-T1-GE3 vs SI7997DP-T1-GE3 |
| SI7945DP-T1-GE3 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 7A I(D), 30V, 0.02ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 | SI7997DP-T1-GE3 vs SI7945DP-T1-GE3 |
SI7997DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7997DP-T1-GE3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for each pin.
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To ensure proper biasing, connect the input pins (VIN and VCC) to a stable voltage source, and decouple them with a 10uF capacitor to ground. Additionally, ensure the output pin (VOUT) is connected to a load impedance of at least 1kΩ.
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The SI7997DP-T1-GE3 is rated for operation from -40°C to 125°C (junction temperature). However, it's recommended to operate within -20°C to 85°C for optimal performance and reliability.
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Yes, the SI7997DP-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure optimal performance and reliability.
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To prevent ESD damage, handle the SI7997DP-T1-GE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device pins or handling the device in close proximity to ESD-generating materials.