Part Details for SI7949DP-T1-GE3 by Vishay Siliconix
Results Overview of SI7949DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Environmental Monitoring
Industrial Automation
Agriculture Technology
Medical Imaging
SI7949DP-T1-GE3 Information
SI7949DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7949DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI7949DP-T1-GE3CT-ND
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DigiKey | MOSFET 2P-CH 60V 3.2A PPAK SO8 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2195 In Stock |
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$0.6874 / $2.3700 | Buy Now |
Part Details for SI7949DP-T1-GE3
SI7949DP-T1-GE3 CAD Models
SI7949DP-T1-GE3 Part Data Attributes
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SI7949DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI7949DP-T1-GE3
Vishay Siliconix
MOSFET P-CH D-S 60V 8-SOIC
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C6 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 24.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 0.064 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.5 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7949DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7949DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7949DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI7949DP-T1-GE3 | Vishay Intertechnologies | $1.4212 | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | SI7949DP-T1-GE3 vs SI7949DP-T1-GE3 |
| SI7949DP-T1-E3 | Vishay Siliconix | Check for Price | Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO T/R | SI7949DP-T1-GE3 vs SI7949DP-T1-E3 |
SI7949DP-T1-GE3 Frequently Asked Questions (FAQ)
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For optimal thermal performance, it is recommended to use a 2-layer or 4-layer PCB with a thermal relief pattern under the device. A minimum of 2 oz copper thickness is recommended. Additionally, ensure that the PCB has a solid ground plane to help dissipate heat.
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To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Use a stable voltage source and decouple the device with a 10uF capacitor in parallel with a 100nF capacitor. Additionally, ensure the device is operated within the recommended temperature range.
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The SI7949DP-T1-GE3 is a sensitive device and requires proper ESD protection during handling and assembly. Use an ESD wrist strap or mat, and ensure all equipment is grounded. Avoid touching the device pins or handling the device in a way that could generate static electricity.
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The SI7949DP-T1-GE3 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper design, testing, and validation. However, it is essential to consult with Vishay Intertechnologies or a qualified engineer to ensure the device meets the specific requirements of the application.
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The thermal resistance (RθJA) is typically 25°C/W, and the junction-to-case thermal resistance (RθJC) is typically 5°C/W. These values are subject to variation depending on the specific application and PCB design.