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Transistors / Power Field-Effect Transistors / SI7852DP-T1-E3
Datasheets
SI7852DP-T1-E3 by:

Power Field-Effect Transistor, 7.6A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SI7852DP-T1-E3 by Vishay Intertechnologies

Results Overview of SI7852DP-T1-E3 by Vishay Intertechnologies

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SI7852DP-T1-E3 Information

SI7852DP-T1-E3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI7852DP-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 61M9831
Newark Mosfet, n Ch,80V,7.6A, ppso8, Transistor Polarity:N Channel, Continuous Drain Current Id:7.6A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0135Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Dissipation Rohs Compliant: Yes |Vishay SI7852DP-T1-E3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3070
  • 1 $2.8900
  • 10 $2.5500
  • 25 $2.4900
  • 50 $2.3200
  • 100 $2.1400
  • 250 $2.0200
  • 500 $1.9000
$1.9000 / $2.8900 Buy Now
DISTI # 38AH2394
Newark N-Channel 80-V (D-S) Mos Rohs Compliant: No |Vishay SI7852DP-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 3000
Buy Now
DISTI # 29X0550
Newark Mosfet, N Channel, 80V, 7.6A, Powerpak So-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:7.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:1.9W Rohs Compliant: Yes |Vishay SI7852DP-T1-E3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.6700
  • 4,000 $1.5500
  • 8,000 $1.4500
  • 12,000 $1.3900
  • 20,000 $1.3700
$1.3700 / $1.6700 Buy Now
DISTI # SI7852DP-T1-E3
Avnet Americas N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SI7852DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.8533
$0.8533 Buy Now
DISTI # 781-SI7852DP-E3
Mouser Electronics MOSFETs 80V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 11620
  • 1 $2.4200
  • 10 $1.9500
  • 100 $1.7000
  • 500 $1.5500
  • 1,000 $1.4700
  • 3,000 $1.3400
$1.3400 / $2.4200 Buy Now
DISTI # V72:2272_07432716
Arrow Electronics Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2319 Container: Cut Strips Americas - 4689
  • 1 $1.5780
  • 10 $1.4530
  • 25 $1.4380
  • 100 $1.3700
  • 250 $1.3560
  • 500 $1.3390
  • 1,000 $1.3210
  • 3,000 $1.3030
$1.3030 / $1.5780 Buy Now
Future Electronics N-Channel 80 V 7.6 A 16.5 Ohm 1.9 W Surface Mount Power MOSFET - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks Container: Reel 0
Reel
  • 3,000 $1.0700
$1.0700 Buy Now
DISTI # 68464057
Verical Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2319 Americas - 4689
  • 5 $1.5780
  • 10 $1.4530
  • 25 $1.4380
  • 100 $1.3700
  • 250 $1.3560
  • 500 $1.3390
  • 1,000 $1.3210
  • 3,000 $1.3030
$1.3030 / $1.5780 Buy Now
Bristol Electronics   34
RFQ
Quest Components 7.6 A, 80 V, 0.0165 OHM, N-CHANNEL, SI, POWER, MOSFET 4
  • 1 $2.4500
  • 3 $1.9600
$1.9600 / $2.4500 Buy Now
DISTI # SI7852DP-T1-E3
TTI MOSFETs 80V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $1.2900
$1.2900 Buy Now
Future Electronics N-Channel 80 V 7.6 A 16.5 Ohm 1.9 W Surface Mount Power MOSFET - PowerPAK-SO-8 Min Qty: 3000 Package Multiple: 3000 6000
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  • 3,000 $1.0800
$1.0800 Buy Now
DISTI # SMC-SI7852DP-T1-E3
Sensible Micro Corporation Transistor, Mosfet, N-Ch, 80V, Powerpak, 8-Soic, Smd RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Cut Tape 8
  • 100 $1.8525
  • 500 $1.8050
  • 1,000 $1.7100
$1.7100 / $1.8525 RFQ
DISTI # SI7852DP-T1-E3
Avnet Asia N-CHANNEL 80-V (D-S) MOSFET (Alt: SI7852DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days 0
RFQ
DISTI # SI7852DP-T1-E3
EBV Elektronik NCHANNEL 80V DS MOSFET (Alt: SI7852DP-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 7603
RFQ

Part Details for SI7852DP-T1-E3

SI7852DP-T1-E3 CAD Models

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SI7852DP-T1-E3 Part Data Attributes

Parametric Data
SI7852DP-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI7852DP-T1-E3 Vishay Intertechnologies Power Field-Effect Transistor, 7.6A I(D), 80V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay
Additional Feature FAST SWITCHING
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 7.6 A
Drain-source On Resistance-Max 0.0165 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5.2 W
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SI7852DP-T1-E3 Related Parts

SI7852DP-T1-E3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI7852DP-T1-E3 is a 5-pin SOT23 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.

  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.

  • The maximum allowed voltage on the input pins of the SI7852DP-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.

  • Yes, the SI7852DP-T1-E3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI).

  • To troubleshoot issues with the SI7852DP-T1-E3, start by verifying the device's pinout and connections. Check for proper power supply, input signals, and output loads. Use oscilloscopes or logic analyzers to monitor signal waveforms and identify potential issues.

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