Part Details for SI7846DP-T1-GE3 by Vishay Siliconix
Results Overview of SI7846DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7846DP-T1-GE3 Information
SI7846DP-T1-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7846DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
742-SI7846DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 150V 4A PPAK SO-8 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1859 In Stock |
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$1.1956 / $3.1600 | Buy Now |
Part Details for SI7846DP-T1-GE3
SI7846DP-T1-GE3 CAD Models
SI7846DP-T1-GE3 Part Data Attributes
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SI7846DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SI7846DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 150V 4A 8-Pin PowerPAK SO T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-XDSO-C5 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.2 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
SI7846DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7846DP-T1-GE3 is a standard SOT23-6 package with a 1.5mm x 2.5mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-40°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
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The recommended input capacitance for the SI7846DP-T1-GE3 is 10nF to 100nF. This range provides a good balance between noise filtering and signal integrity.
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Yes, the SI7846DP-T1-GE3 is suitable for high-reliability applications. It is built with high-reliability materials and manufacturing processes, and is qualified to automotive and industrial standards.
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To troubleshoot issues with the SI7846DP-T1-GE3, start by verifying the device's pinout and connections. Check for proper power supply, input signals, and output loading. Use oscilloscopes and logic analyzers to debug signal integrity issues.