Part Details for SI7686DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7686DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SI7686DP-T1-GE3 Information
SI7686DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SI7686DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33P5422
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Newark | N Channel Mosfet, 30V, 35A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI7686DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6530 / $0.7810 | Buy Now |
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DISTI #
26R1934
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Newark | N Channel Mosfet, 30V, 35A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI7686DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.9490 | Buy Now |
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DISTI #
SI7686DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7686DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.6115 / $0.6375 | Buy Now |
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DISTI #
781-SI7686DP-T1-GE3
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Mouser Electronics | MOSFETs 30V 35A 37.9W 9.5mohm @ 10V RoHS: Compliant | 0 |
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$0.6370 / $2.2300 | Order Now |
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Bristol Electronics | 2905 |
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RFQ | ||
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Quest Components | 17.9 A, 30 V, 0.0095 OHM, N-CHANNEL, SI, POWER, MOSFET | 2324 |
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$0.6288 / $1.7965 | Buy Now |
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DISTI #
SI7686DP-T1-GE3
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TTI | MOSFETs 30V 35A 37.9W 9.5mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.6220 / $0.6470 | Buy Now |
Part Details for SI7686DP-T1-GE3
SI7686DP-T1-GE3 CAD Models
SI7686DP-T1-GE3 Part Data Attributes
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SI7686DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7686DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 17.9A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 17.9 A | |
| Drain-source On Resistance-Max | 0.0095 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37.9 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI7686DP-T1-GE3
This table gives cross-reference parts and alternative options found for SI7686DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7686DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RS1E170GNTB | ROHM Semiconductor | Check for Price | Power Field-Effect Transistor, 17A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 | SI7686DP-T1-GE3 vs RS1E170GNTB |
| BSC059N03SGAUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | SI7686DP-T1-GE3 vs BSC059N03SGAUMA1 |
| STL70N2LLH5 | STMicroelectronics | Check for Price | 18A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWER FLAT-5 | SI7686DP-T1-GE3 vs STL70N2LLH5 |
SI7686DP-T1-GE3 Frequently Asked Questions (FAQ)
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A good PCB layout for the SI7686DP-T1-GE3 should consider the following: keep the input and output traces short and symmetrical, use a solid ground plane, and place decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
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The SI7686DP-T1-GE3 requires a stable power supply with a voltage range of 2.5V to 5.5V. Ensure the power supply is decoupled with a 10uF capacitor and a 100nF capacitor in parallel, placed close to the device. Also, make sure the power supply can provide enough current to support the device's operating current.
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The SI7686DP-T1-GE3 can operate with a clock frequency up to 100MHz. However, the recommended clock frequency is 25MHz to 50MHz for optimal performance and to minimize power consumption.
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The SI7686DP-T1-GE3 can be configured for either I2C or SPI interface by setting the MODE pin accordingly. For I2C, tie the MODE pin to VCC, and for SPI, tie it to GND. Additionally, ensure the correct pin connections and bus configuration for the chosen interface.
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The SI7686DP-T1-GE3 has an operating temperature range of -40°C to 125°C. However, the device's performance and accuracy may degrade at extreme temperatures. Ensure proper thermal management and consider the device's thermal characteristics during system design.