Part Details for SI7478DP-T1-GE3 by Vishay Intertechnologies
Results Overview of SI7478DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI7478DP-T1-GE3 Information
SI7478DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI7478DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26R1929
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Newark | N Channel Mosfet, 60V, 20A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI7478DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.8100 | Buy Now |
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DISTI #
SI7478DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 60V 15A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7478DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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$1.0459 / $1.4250 | Buy Now |
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DISTI #
781-SI7478DP-T1-GE3
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Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 3669 |
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$1.3800 / $3.2600 | Buy Now |
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DISTI #
69066109
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Verical | Trans MOSFET N-CH 60V 15A 8-Pin PowerPAK SO T/R RoHS: Compliant Min Qty: 28 Package Multiple: 1 Date Code: 2311 | Americas - 2160 |
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$1.0400 / $1.4700 | Buy Now |
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Bristol Electronics | 408 |
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RFQ | ||
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DISTI #
SI7478DP-T1-GE3
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IBS Electronics | SINGLE N-CHANNEL 60 V 0.0075 OHMS SURFACE MOUNT POWER MOSFET - POWERPAK SO-8 Min Qty: 3000 Package Multiple: 1 | 0 |
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$1.3520 | Buy Now |
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DISTI #
SI7478DP-T1-GE3
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 2160 |
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$0.9300 / $1.9300 | Buy Now |
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DISTI #
SI7478DP-T1-GE3
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EBV Elektronik | Trans MOSFET NCH 60V 15A 8Pin PowerPAK SO TR (Alt: SI7478DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 2719 |
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RFQ |
Part Details for SI7478DP-T1-GE3
SI7478DP-T1-GE3 CAD Models
SI7478DP-T1-GE3 Part Data Attributes
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SI7478DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7478DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 15A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.4 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
SI7478DP-T1-GE3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI7478DP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.35mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.
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The SI7478DP-T1-GE3 is capable of delivering up to 1A of output current. However, it's recommended to limit the output current to 500mA for optimal performance and to prevent overheating.
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To protect the SI7478DP-T1-GE3 from overvoltage and undervoltage conditions, add a voltage supervisor or a reset IC to monitor the input voltage and reset the device if it falls outside the recommended operating range (2.5V to 5.5V).
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The thermal derating curve for the SI7478DP-T1-GE3 is typically 1.5mA/°C above 25°C. This means that for every 1°C increase in temperature above 25°C, the maximum output current should be reduced by 1.5mA to prevent overheating.